2N6235R Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N6235R
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 275 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 250 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO66
2N6235R Transistor Equivalent Substitute - Cross-Reference Search
2N6235R Datasheet (PDF)
2n6235x.pdf
2N6235XDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 275V IC = 5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS spec
2n6235.pdf
2N6235Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 325V IC = 5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci
2n6235.pdf
isc Silicon NPN Power Transistor 2N6235DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 325V(Min)CEO(SUS)DC Current Gain-: h = 25-125@ I = 1AFE CLow Collector-Emitter Saturation Voltage-: V )= 0.5V(Max)@ I = 1ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned f for high-voltage medium pow
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
