2SC5136 Todos los transistores

2SC5136 Silicon NPN Epitaxial ADE-208-223 1st. Edition Application VHF/UHF wide band amplifier Features High gain bandwidth product fT = 3.8 GHz typ High gain, low noise figure PG = 11 dB typ, NF = 2.5 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5136 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base v

2SC5138 Silicon NPN Epitaxial ADE-208-225A (Z) 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 6 GHz typ High gain, low noise figure PG = 13 dB typ, NF = 1.8 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector Note Marking is YL . Attention This device is very sensitive to ele

2SC5139 Silicon NPN Epitaxial ADE-208-226 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 11 GHz typ High gain, low noise figure PG = 15 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5139 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base

2SC5137 Silicon NPN Epitaxial ADE-208-224 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 10 GHz typ High gain, low noise figure PG = 16.5 dB typ, NF = 1.5 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5137 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to bas

2SC5130 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SC5130 Unit Symbol Conditions 2SC5130 Unit 0.2 4.2 0.2 10.1 c0.5 VCBO 600 V ICBO VCB=500V 100max A 2.8