Биполярный транзистор 2SC5136
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC5136
Маркировка: TI-
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.08
W
Макcимально допустимое напряжение коллектор-база (Ucb): 25
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 13
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3
V
Макcимальный постоянный ток коллектора (Ic): 0.05
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 3000
MHz
Ёмкость коллекторного перехода (Cc): 0.85
pf
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: SMPAK
Аналоги (замена) для 2SC5136
2SC5136
Datasheet (PDF)
..1. Size:58K hitachi
2sc5136.pdf 
2SC5136Silicon NPN EpitaxialADE-208-2231st. EditionApplicationVHF/UHF wide band amplifierFeatures High gain bandwidth productfT = 3.8 GHz typ High gain, low noise figurePG = 11 dB typ, NF = 2.5 dB typ at f = 900 MHzOutlineSMPAK3121. Emitter2. Base3. Collector2SC5136Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base v
8.2. Size:23K hitachi
2sc5132.pdf 
2SC5132ASilicon NPN Triple Diffused PlanarApplicationTO3PFM (N)Character display horizontal deflection outputFeatures High breakdown voltageVCES = 1500 V, IC = 8 A Builtin damper diode type Isolated packageCTO-3PFMB1. Base2. Collector13. Emitter23EAbsolute Maximum Ratings (Ta = 25C)Item Symbol Ratings Unit
8.3. Size:47K hitachi
2sc5138.pdf 
2SC5138Silicon NPN EpitaxialADE-208-225A (Z)2nd. EditionMar. 2001ApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 6 GHz typ High gain, low noise figurePG = 13 dB typ, NF = 1.8 dB typ at f = 900 MHzOutlineSMPAK3121. Emitter2. Base3. CollectorNote: Marking is YL.Attention: This device is very sensitive to ele
8.4. Size:57K hitachi
2sc5139.pdf 
2SC5139Silicon NPN EpitaxialADE-208-2261st. EditionApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 11 GHz typ High gain, low noise figurePG = 15 dB typ, NF = 1.1 dB typ at f = 900 MHzOutlineSMPAK3121. Emitter2. Base3. Collector2SC5139Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base
8.5. Size:58K hitachi
2sc5137.pdf 
2SC5137Silicon NPN EpitaxialADE-208-2241st. EditionApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 10 GHz typ High gain, low noise figurePG = 16.5 dB typ, NF = 1.5 dB typ at f = 900 MHzOutlineSMPAK3121. Emitter2. Base3. Collector2SC5137Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to bas
8.6. Size:24K sanken-ele
2sc5130.pdf 
2SC5130Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SC5130 Unit Symbol Conditions 2SC5130 Unit0.24.20.210.1c0.5VCBO 600 V ICBO VCB=500V 100max A2.8
8.7. Size:172K inchange semiconductor
2sc5130.pdf 
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5130DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25
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