2SC5193 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC5193MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORCOMPACT MINI MOLDFEATURESPACKAGE DRAWING(Units: mm) Low Voltage Operation, Low Phase Distortion Low Noise2.10.1NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz1.250.1NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Coll

2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 140 V (min) Complementary to 2SA1941 Suitable for use in 70-W high fidelity audio amplifiers output stage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 140 VCollector-em

2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 140 V (min) Complementary to 2SA1941 Suitable for use in 70-W high fidelity audio amplifiers output stage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 140 VCollector-em

DATA SHEETSILICON TRANSISTOR2SC5194MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORFEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit: mm) Low Noise2.10.2NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz1.250.1NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector CurrentIC = 100 mA 4-P

DATA SHEETSILICON TRANSISTOR2SC5195MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORFEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit: mm) Low Noise1.60.1NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz0.80.1NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz2 Large Absolute Maximum Collector CurrentIC = 100 mA S

DATA SHEETSILICON TRANSISTOR2SC5192MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR4 PINS MINI MOLDFEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit: mm) Low NoiseNF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz +0.22.8 0.3+0.2NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz1.5 0.1 Large Absolute Maximum Collect

DATA SHEETNPN SILICON RF TRANSISTOR2SC5191NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES Low Voltage Operation, Low Phase Distortion Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Current IC = 100 mA

Transistor2SC5190Silicon NPN epitaxial planer typeFor low-voltage high-frequency amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT.Small collector output capacitance Cob. 1S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute Maximum Ratings

Transistor2SC5190Silicon NPN epitaxial planer typeFor low-voltage high-frequency amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT.Small collector output capacitance Cob. 1S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute Maximum Ratings

Complementary NPN-PNP Power Bipolar Transistor R 2SC5198 2SA1941 APPLICATIONS Audio Products Home Amplifiers Home Receivers Auto Audio Amplifiers FEATURES VCEO=140V (min) High collector voltageVCEO

RoHS 2SC5198B Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor10A/140V/100W15.60.44.80.29.62.00.13.20,12TO-3P(B)3+0.2+0.20.651.05-0.1-0.1FEATURESHigh breakdown voltage, VCEO =140V (min) 5.450.1 5.450.11.4Complementary to 2SA1941BB C ETO-3P package which can be installed to the heat

SMD Type TransistorsNPN Transistors2SC5191SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=100mA1 2 Collector Emitter Voltage VCEO=6V+0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 9 Collector

2SC5198Silicon NPN transistorPower Amplifier Applications Complementary to 2SA1941 High collector voltage:VCEO=140V (min) Recommended for 100-W high-fidelity audio frequency amplifierOutput stageNote1: Using continuously under heavy loads (e.g. the applicationof high temperature/current/voltage and the significant changein temperature, etc.) may cause this product to

2SC5198T7TLSilicon NPN Power TransistorDESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Min) @I = 7ACE(sat) CGood Linearity of hFEComplement to Type 2SA1941APPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC5198DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Min) @I = 7ACE(sat) CGood Linearity of hFEComplement to Type 2SA1941APPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC5197 DESCRIPTIONLow Collector Saturation Voltage-: VCE(sat)= 2.0V(Min) @IC= 6AGood Linearity of hFEComplement to Type 2SA1940APPLICATIONS Power amplifier applicationsRecommend for 55W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAME

2SC5198 Transistor Silicon NPN Epitaxial Type Power Amplifier Applications FEATURES * High collector voltage: Vceo=140V(min) * Recommended for 70W high-fidelity audio Frequency amplifier output * Complementary to 2SA1941 MAXIMUM RATINGS (Ta=25 ) Parameter Symbol Rating Unit Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 140 V Emitter-Base Voltage V

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5199DESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOComplement to Type 2SA1942100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsReco

isc Silicon NPN Power Transistor 2SC5198DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Min) @I = 7ACE(sat) CGood Linearity of hFEComplement to Type 2SA1941Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage appli

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5197DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Min) @I = 6ACE(sat) CGood Linearity of hFEComplement to Type 2SA1940100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 55W high fidel

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC5191DESCRIPTIONLow Voltage Operation ,Low Phase DistortionLow NoiseNF = 1.5 dB TYP. @V = 3 V, I = 7 mA, f = 2 GHzCE CNF = 1.7 dB TYP. @V = 1 V, I = 3 mA, f = 2 GHzCE CLarge Absolute Maximum Collector CurrentI = 100 mAC100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and re

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5196DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Min) @I = 5ACE(sat) CGood Linearity of hFEComplement to Type 2SA1939100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 40W high fidel