2SC5193 - описание и поиск аналогов

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC5193 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD FEATURES PACKAGE DRAWING (Units mm) Low Voltage Operation, Low Phase Distortion Low Noise 2.1 0.1 NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz 1.25 0.1 NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Coll

2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit mm High breakdown voltage VCEO = 140 V (min) Complementary to 2SA1941 Suitable for use in 70-W high fidelity audio amplifier s output stage Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-em

2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit mm High breakdown voltage VCEO = 140 V (min) Complementary to 2SA1941 Suitable for use in 70-W high fidelity audio amplifier s output stage Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-em

DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit mm) Low Noise 2.1 0.2 NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz 1.25 0.1 NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Current IC = 100 mA 4-P

DATA SHEET SILICON TRANSISTOR 2SC5195 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit mm) Low Noise 1.6 0.1 NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz 0.8 0.1 NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz 2 Large Absolute Maximum Collector Current IC = 100 mA S

DATA SHEET SILICON TRANSISTOR 2SC5192 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit mm) Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz +0.2 2.8 0.3 +0.2 NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz 1.5 0.1 Large Absolute Maximum Collect

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5191 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES Low Voltage Operation, Low Phase Distortion Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Current IC = 100 mA

Transistor 2SC5190 Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. Small collector output capacitance Cob. 1 S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings

Transistor 2SC5190 Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. Small collector output capacitance Cob. 1 S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings

Complementary NPN-PNP Power Bipolar Transistor R 2SC5198 2SA1941 APPLICATIONS Audio Products Home Amplifiers Home Receivers Auto Audio Amplifiers FEATURES VCEO=140V (min) High collector voltage VCEO

RoHS 2SC5198B Series RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor 10A/140V/100W 15.6 0.4 4.8 0.2 9.6 2.0 0.1 3.2 0,1 2 TO-3P(B) 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES High breakdown voltage, VCEO =140V (min) 5.45 0.1 5.45 0.1 1.4 Complementary to 2SA1941B B C E TO-3P package which can be installed to the heat

SMD Type Transistors NPN Transistors 2SC5191 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=100mA 1 2 Collector Emitter Voltage VCEO=6V +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 9 Collector

2SC5198 Silicon NPN transistor Power Amplifier Applications Complementary to 2SA1941 High collector voltage VCEO=140V (min) Recommended for 100-W high-fidelity audio frequency amplifier Output stage Note1 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

2SC5198T7TL Silicon NPN Power Transistor DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Min) @I = 7A CE(sat) C Good Linearity of h FE Complement to Type 2SA1941 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC5198 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Min) @I = 7A CE(sat) C Good Linearity of h FE Complement to Type 2SA1941 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC5197 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= 2.0V(Min) @IC= 6A Good Linearity of hFE Complement to Type 2SA1940 APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAME

2SC5198 Transistor Silicon NPN Epitaxial Type Power Amplifier Applications FEATURES * High collector voltage Vceo=140V(min) * Recommended for 70W high-fidelity audio Frequency amplifier output * Complementary to 2SA1941 MAXIMUM RATINGS (Ta=25 ) Parameter Symbol Rating Unit Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 140 V Emitter-Base Voltage V

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5199 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Complement to Type 2SA1942 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Reco

isc Silicon NPN Power Transistor 2SC5198 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Min) @I = 7A CE(sat) C Good Linearity of h FE Complement to Type 2SA1941 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage appli

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5197 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Min) @I = 6A CE(sat) C Good Linearity of h FE Complement to Type 2SA1940 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 55W high fidel

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC5191 DESCRIPTION Low Voltage Operation ,Low Phase Distortion Low Noise NF = 1.5 dB TYP. @V = 3 V, I = 7 mA, f = 2 GHz CE C NF = 1.7 dB TYP. @V = 1 V, I = 3 mA, f = 2 GHz CE C Large Absolute Maximum Collector Current I = 100 mA C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and re

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5196 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Min) @I = 5A CE(sat) C Good Linearity of h FE Complement to Type 2SA1939 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 40W high fidel