2N6254 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N6254  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 90 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 0.8 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO3

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2N6254 datasheet

 ..1. Size:12K  semelab
2n6254.pdf pdf_icon

2N6254

2N6254 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 15A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

 ..2. Size:99K  jmnic
2n6254.pdf pdf_icon

2N6254

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6254 DESCRIPTION With TO-3 package Low saturation voltage Wide safe operating area High dissipation capability APPLICATIONS Series and shunt regulators High fidelity amplifiers Power switching circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3)

 ..3. Size:116K  inchange semiconductor
2n6254.pdf pdf_icon

2N6254

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6254 DESCRIPTION With TO-3 package Low collector saturation voltage Wide safe operating area High dissipation capability APPLICATIONS Series and shunt regulators High fidelity amplifiers Power switching circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline

 0.1. Size:202K  comset
2n6253-2n6254-2n6371.pdf pdf_icon

2N6254

2N6253 - 2N6254 - 2N6371 HIGH POWER SILICON NPN TRANSISTORS The 2N6253, 2N6254, and 2N6371 are silicon NPN transistors intended for a wide variety of high-power applications. The construction of these devices renders them highly resistant to second breakdown over a wide range of operating conditions. These devices differ in maximum ratings for voltage and power dissipation. All are suppli

Otros transistores... 2N6246, 2N6247, 2N6248, 2N6249, 2N625, 2N6250, 2N6251, 2N6253, 13007, 2N6255, 2N6256, 2N6257, 2N6258, 2N6259, 2N626, 2N6260, 2N6261