2N6254Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 15A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6254 DESCRIPTION With TO-3 package Low saturation voltage Wide safe operating area High dissipation capability APPLICATIONS Series and shunt regulators High fidelity amplifiers Power switching circuits PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3)

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6254 DESCRIPTION With TO-3 package Low collector saturation voltage Wide safe operating area High dissipation capability APPLICATIONS Series and shunt regulators High fidelity amplifiers Power switching circuits PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline

2N6253 - 2N6254 - 2N6371HIGH POWER SILICON NPN TRANSISTORSThe 2N6253, 2N6254, and 2N6371 are silicon NPN transistors intended for a widevariety of high-power applications. The construction of these devices renders themhighly resistant to second breakdown over a wide range of operating conditions.These devices differ in maximum ratings for voltage and power dissipation. All aresuppli

Order this documentMOTOROLAby 2N6251/DSEMICONDUCTOR TECHNICAL DATA2N6251High Voltage NPN Silicon PowerTransistors15 AMPEREPOWER TRANSISTOR. . . designed for high voltage inverters, switching regulators and line operatedNPN SILICONamplifier applications. Especially well suited for switching power supply applications.350 VOLTS High Voltage Breakdown Rating 175 WATTS

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2N6249 2N6250 2N6251HIGH VOLTAGE NPN SILICON POWER TRANSISTORSHIGH VOLTAGE NPN SILICON POWER TRANSISTORSThe 2N6249 2N6250 2N6251 are NPN silicon transistors in Jedec TO-3.They are designed for high voltage inverters, switching regulators and line operated amplifierapplications. Especially well suited for switching power supply applications. High Voltage Breakdown

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2N6253Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 45V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 15A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6258 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage APPLICATIONS Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAME

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6249 2N6250 2N6251 DESCRIPTION With TO-3 package High voltage Low saturation voltage Fast switching capability APPLICATIONS For high voltage inverters ,switching regulators and line operated amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Em

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6257 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage Excellent safe operating area APPLICATIONS Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maxim

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6253 DESCRIPTION With TO-3 package Low saturation voltage Wide safe operating area High dissipation capability APPLICATIONS Series and shunt regulators High fidelity amplifiers Power switching circuits PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3)

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6259 DESCRIPTION With TO-3 package Low collector saturation voltage High power dissipation APPLICATIONS Designed for high power audio ,disk head positioners,linear amplifiers,switching regulators solenoid drivers,and DC-DC converters or inverters PINNING PIN DESCRIPTION1 Base 2 Emitter3 Colle

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/510 DEVICES LEVELS 2N6249 2N6250 2N6251 JAN2N6249T1 2N6250T1 2N6251T1 JANTXJA

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/510 DEVICES LEVELS 2N6249 2N6250 2N6251 JAN2N6249T1 2N6250T1 2N6251T1 JANTXJA

140 COMMERCE DRIVEMONTGOMERYVILLE, PA18936-1013PHONE: (215) 631-9840FAX: (215) 631-98552N6255RF & MICROWAVE DISCRETELOW POWER TRANSISTORSFeatures Silicon NPN, To-39 packaged VHF Transistor 3.0 Watt Power Output @ 175 MHz Power Gain, GPE = 7.8 dB Efficiency = 50%1. Emitter2. Base3. CollectorTO-39DESCRIPTION:Silicon NPN transistor, designed for 12.5

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/510 DEVICES LEVELS 2N6249 2N6250 2N6251 JAN2N6249T1 2N6250T1 2N6251T1 JANTXJA

NPN High Power Silicon Transistors2N6249, 2N6250, 2N6251Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/371 TO-3 (TO-204AA) PackageMaximum RatingsRatings Symbol 2N6249 2N6250 2N6251 UnitsCollector - Emitter Voltage VCEO 200 275 350 VdcCollector - Base Voltage VCBO300 375 450 VdcEmitter - Base Voltage VEBO 6.0 VdcCollector Current IC 10 AdcBase Curr

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6258 DESCRIPTION With TO-3 package Low collector saturation voltage APPLICATIONS Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAM

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6249 2N6250 2N6251 DESCRIPTION With TO-3 package High voltage,high speed Low collector saturation voltage APPLICATIONS High voltage inverters Switching regulators Line operated amplifier PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified out

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6257 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area APPLICATIONS Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maxi

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6253 DESCRIPTION With TO-3 package Low collector saturation voltage Wide safe operating area High dissipation capability APPLICATIONS Series and shunt regulators High fidelity amplifiers Power switching circuits PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6259 DESCRIPTION DC Current Gain- : hFE= 15-60@IC= 8A High Power Dissipation : PD= 150W@ IC= 15A APPLICATIONS Designed for high power audio, disk head positioners, linear amplifiers, switching regulators,solenoid drivers,and DC-DC converters or inverters. ABSOLUTE MAXIMUM RATINGS(T

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6251 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) High Power Dissipation APPLICATIONS Designed for high voltage, high current ,high speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 450 V