2SC5225 Datasheet. Equivalente

 ..1. Size:29K  hitachi
 2sc5225.pdf

2SC5225 Silicon NPN Epitaxial Transistor ADE-208-393 1st. Edition Application Wide band video output amplifier for color CRT monitor. High frequency high voltage amplifier. High speed power switching. Complementary pair with 2SA1960. Features High voltage large current operation. VCEO = 80 V, IC = 300 mA High fT. fT = 1.4 GHz Small output capacitance.

 8.1. Size:128K  sanyo
 2sc5228.pdf

Ordering number EN5035 NPN Epitaxial Planar Silicon Transistor 2SC5228 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise NF=1.0dB typ (f=1GHz). unit mm 2 High gain S21e =13.5dB typ (f=1GHz). 2110A High cutoff frequency fT=7GHz typ. [2SC5228] 1.9 0.95 0.95 0.4 0.16 4 3 0 to 0.1 2 1 0.6 0.95 0.85 1 Emitter

 8.2. Size:134K  sanyo
 2sc5229.pdf

Ordering number EN5045 NPN Epitaxial Planar Silicon Transistor 2SC5229 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise NF=1.0dB typ (f=1GHz). unit mm 2 High gain S21e =10.5dB typ (f=1GHz). 2038A High cutoff frequency fT=6.5GHz typ. [2SC5229] Medium power operation NF=1.7dB typ (f=1GHz). 4.5 2 1.5 (VCE=8V

 8.3. Size:127K  sanyo
 2sc5227.pdf

Ordering number EN5034 NPN Epitaxial Planar Silicon Transistor 2SC5227 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise NF=1.0dB typ (f=1GHz). unit mm 2 High gain S21e =12dB typ (f=1GHz). 2018B High cutoff frequency fT=7GHz typ. [2SC5227] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 Base 2 Emitter 3

 8.4. Size:112K  sanyo
 2sc5226.pdf

Ordering number EN5032A NPN Epitaxial Planar Silicon Transistor 2SC5226 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise NF=1.0dB typ (f=1GHz). unit mm 2 High gain S21e =12dB typ (f=1GHz). 2059B High cutoff frequency fT=7GHz typ. [2SC5226] 0.3 0.15 3 0 to 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 Base 2 Emi

 8.5. Size:75K  sanyo
 2sc5227a.pdf

Ordering number ENA1063 2SC5227A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise 2SC5227A Amplifier Applications Features Low-noise NF=1.0dB typ (f=1GHz). High gain S21e 2=12dB typ (f=1GHz). High cut-off frequency fT=7GHz typ. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditio

 8.6. Size:75K  sanyo
 2sc5226a.pdf

Ordering number ENA1062 2SC5226A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise 2SC5226A Amplifier Applications Features Low-noise NF=1.0dB typ (f=1GHz). High gain S21e 2=12dB typ (f=1GHz). High cut-off frequency fT=7GHz typ. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditio

 8.7. Size:229K  onsemi
 2sc5227a-4-tb-e 2sc5227a-5-tb-e.pdf

Ordering number ENA1063A 2SC5227A RF Transistor http //onsemi.com 10V, 70mA, fT=7GHz, NPN Single CP Features Low-noise NF=1.0dB typ (f=1GHz) High gain 2 S21e =12dB typ (f=1GHz) High cut-off frequency fT=7GHz typ Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-t

 8.8. Size:237K  onsemi
 2sc5226a-4 2sc5226a-5.pdf

Ordering number ENA1062A 2SC5226A RF Transistor http //onsemi.com 10V, 70mA, fT=7GHz, NPN Single MCP Features Low-noise NF=1.0dB typ (f=1GHz) High gain 2 S21e =12dB typ (f=1GHz) High cut-off frequency fT=7GHz typ Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-

 8.9. Size:356K  onsemi
 2sc5226a.pdf

Ordering number ENA1062A 2SC5226A RF Transistor http //onsemi.com 10V, 70mA, fT=7GHz, NPN Single MCP Features Low-noise NF=1.0dB typ (f=1GHz) High gain 2 S21e =12dB typ (f=1GHz) High cut-off frequency fT=7GHz typ Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-

 8.10. Size:42K  panasonic
 2sc5223.pdf

Power Transistors 2SC5223 Silicon NPN triple diffusion planar type Unit mm 6.5 0.1 2.3 0.1 5.3 0.1 4.35 0.1 For high-speed switching 0.5 0.1 1.0 0.1 Features 0.1 0.05 0.93 0.1 0.5 0.1 High collector to base voltage VCBO 0.75 0.1 2.3 0.1 High collector to emitter VCEO 4.6 0.1 1 Base 2 Collector 3 Emitter 1 2 3 Absolute Maximum Ratings (Ta=25 C)

 8.11. Size:1268K  kexin
 2sc5229.pdf

SMD Type Transistors NPN Transistors 2SC5229 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=70mA Collector Emitter Voltage VCEO=10V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 10 V Emitter - Base Voltage VE

 8.12. Size:974K  kexin
 2sc5227.pdf

SMD Type Transistors NPN Transistors 2SC5227 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=70mA 1 2 Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec

 8.13. Size:175K  inchange semiconductor
 2sc5227.pdf

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC5227 DESCRIPTION High Gain Bandwidth Product f = 7 GHz TYP. T High Gain, Low Noise Figure S 2 = 12 dB TYP., NF = 1.0 dB TYP @ f = 1 GHz 21e 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for VHF UHF wideband low noise amplifier app