2SC5225 - описание и поиск аналогов

2SC5225 Silicon NPN Epitaxial Transistor ADE-208-393 1st. Edition Application Wide band video output amplifier for color CRT monitor. High frequency high voltage amplifier. High speed power switching. Complementary pair with 2SA1960. Features High voltage large current operation. VCEO = 80 V, IC = 300 mA High fT. fT = 1.4 GHz Small output capacitance.

Ordering number EN5035 NPN Epitaxial Planar Silicon Transistor 2SC5228 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise NF=1.0dB typ (f=1GHz). unit mm 2 High gain S21e =13.5dB typ (f=1GHz). 2110A High cutoff frequency fT=7GHz typ. [2SC5228] 1.9 0.95 0.95 0.4 0.16 4 3 0 to 0.1 2 1 0.6 0.95 0.85 1 Emitter

Ordering number EN5045 NPN Epitaxial Planar Silicon Transistor 2SC5229 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise NF=1.0dB typ (f=1GHz). unit mm 2 High gain S21e =10.5dB typ (f=1GHz). 2038A High cutoff frequency fT=6.5GHz typ. [2SC5229] Medium power operation NF=1.7dB typ (f=1GHz). 4.5 2 1.5 (VCE=8V

Ordering number EN5034 NPN Epitaxial Planar Silicon Transistor 2SC5227 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise NF=1.0dB typ (f=1GHz). unit mm 2 High gain S21e =12dB typ (f=1GHz). 2018B High cutoff frequency fT=7GHz typ. [2SC5227] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 Base 2 Emitter 3

Ordering number EN5032A NPN Epitaxial Planar Silicon Transistor 2SC5226 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise NF=1.0dB typ (f=1GHz). unit mm 2 High gain S21e =12dB typ (f=1GHz). 2059B High cutoff frequency fT=7GHz typ. [2SC5226] 0.3 0.15 3 0 to 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 Base 2 Emi

Ordering number ENA1063 2SC5227A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise 2SC5227A Amplifier Applications Features Low-noise NF=1.0dB typ (f=1GHz). High gain S21e 2=12dB typ (f=1GHz). High cut-off frequency fT=7GHz typ. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditio

Ordering number ENA1062 2SC5226A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise 2SC5226A Amplifier Applications Features Low-noise NF=1.0dB typ (f=1GHz). High gain S21e 2=12dB typ (f=1GHz). High cut-off frequency fT=7GHz typ. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditio

Ordering number ENA1063A 2SC5227A RF Transistor http //onsemi.com 10V, 70mA, fT=7GHz, NPN Single CP Features Low-noise NF=1.0dB typ (f=1GHz) High gain 2 S21e =12dB typ (f=1GHz) High cut-off frequency fT=7GHz typ Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-t

Ordering number ENA1062A 2SC5226A RF Transistor http //onsemi.com 10V, 70mA, fT=7GHz, NPN Single MCP Features Low-noise NF=1.0dB typ (f=1GHz) High gain 2 S21e =12dB typ (f=1GHz) High cut-off frequency fT=7GHz typ Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-

Ordering number ENA1062A 2SC5226A RF Transistor http //onsemi.com 10V, 70mA, fT=7GHz, NPN Single MCP Features Low-noise NF=1.0dB typ (f=1GHz) High gain 2 S21e =12dB typ (f=1GHz) High cut-off frequency fT=7GHz typ Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-

Power Transistors 2SC5223 Silicon NPN triple diffusion planar type Unit mm 6.5 0.1 2.3 0.1 5.3 0.1 4.35 0.1 For high-speed switching 0.5 0.1 1.0 0.1 Features 0.1 0.05 0.93 0.1 0.5 0.1 High collector to base voltage VCBO 0.75 0.1 2.3 0.1 High collector to emitter VCEO 4.6 0.1 1 Base 2 Collector 3 Emitter 1 2 3 Absolute Maximum Ratings (Ta=25 C)

SMD Type Transistors NPN Transistors 2SC5229 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=70mA Collector Emitter Voltage VCEO=10V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 10 V Emitter - Base Voltage VE

SMD Type Transistors NPN Transistors 2SC5227 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=70mA 1 2 Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC5227 DESCRIPTION High Gain Bandwidth Product f = 7 GHz TYP. T High Gain, Low Noise Figure S 2 = 12 dB TYP., NF = 1.0 dB TYP @ f = 1 GHz 21e 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for VHF UHF wideband low noise amplifier app