2SC5305LS Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC5305LS  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 35 W

Tensión colector-base (Vcb): 1200 V

Tensión colector-emisor (Vce): 600 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO-220FI

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2SC5305LS datasheet

 ..1. Size:42K  sanyo
 2sc5305ls.pdf pdf_icon

2SC5305LS

Ordering number ENN5884A NPN Triple Diffused Planar Silicon Transistor 2SC5305LS Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1200V). unit mm High reliability (Adoption of HVP process). 2079D Adoption of MBIT process. [2SC5305] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 Base 1 2 3 2 Collector 3 Emitter Specifications 2.55

 7.1. Size:34K  sanyo
 2sc5305.pdf pdf_icon

2SC5305LS

Ordering number EN5884 NPN Triple Diffused Planar Silicon Transistor 2SC5305 Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1200V). unit mm High reliability (Adoption of HVP process). 2079B Adoption of MBIT process. [2SC5305] 4.5 10.0 2.8 3.2 0.9 0.7 1.2 0.75 1 Base 1 2 3 2 Collector 3 Emitter 2.55 2.55 SANYO TO-220FI

 7.2. Size:156K  utc
 2sc5305.pdf pdf_icon

2SC5305LS

UTC 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High hFE for Low base drive requirement * Suitable for half bridge light ballast Applications 1 * Built-in Free-wheeling Diode makes it specially suitable for light ballast Applications * Well controlled storage-time spread for all range of hFE TO-220 1 Base 2 Colle

 7.3. Size:212K  inchange semiconductor
 2sc5305.pdf pdf_icon

2SC5305LS

isc Silicon NPN Power Transistor 2SC5305 DESCRIPTION High Breakdown Voltage V = 1200V (Min) (BR)CBO High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for inverter lighting applications. Absolute maximum ratings (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1200 V CBO V Collect

MOSTRAR MÁS

Otros transistores... 2SC5294A, 2SC5295, 2SC5298, 2SC5300, 2SC5301, 2SC5302, 2SC5303, 2SC5304LS, 2SC5198, 2SC5315, 2SC5316, 2SC5317, 2SC5318, 2SC5320, 2SC5321, 2SC5322, 2SC5323