2SC5305LS - параметры, поиск аналогов, даташиты транзистора

2SC5305LS Datasheet (PDF)

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Ordering number:ENN5884ANPN Triple Diffused Planar Silicon Transistor2SC5305LSInverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1200V).unit:mm High reliability (Adoption of HVP process).2079D Adoption of MBIT process.[2SC5305]10.0 4.53.22.80.91.2 1.20.75 0.71:Base1 2 32:Collector3:EmitterSpecifications2.55

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Ordering number:EN5884NPN Triple Diffused Planar Silicon Transistor2SC5305Inverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1200V).unit:mm High reliability (Adoption of HVP process).2079B Adoption of MBIT process.[2SC5305]4.510.02.83.20.90.71.20.751:Base1 2 32:Collector3:Emitter2.55 2.55SANYO:TO-220FI

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UTC 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High hFE for Low base drive requirement * Suitable for half bridge light ballast Applications 1* Built-in Free-wheeling Diode makes it specially suitable for light ballast Applications * Well controlled storage-time spread for all range of hFE TO-220 1: Base 2: Colle

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isc Silicon NPN Power Transistor 2SC5305DESCRIPTIONHigh Breakdown Voltage:V = 1200V (Min)(BR)CBOHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for inverter lighting applications.Absolute maximum ratings (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1200 VCBOV Collect

Другие транзисторы... 2SC5294A , 2SC5295 , 2SC5298 , 2SC5300 , 2SC5301 , 2SC5302 , 2SC5303 , 2SC5304LS , 2SC2383Y , 2SC5315 , 2SC5316 , 2SC5317 , 2SC5318 , 2SC5320 , 2SC5321 , 2SC5322 , 2SC5323 .