2SC5305LS Datasheet and Replacement

Ordering number:ENN5884ANPN Triple Diffused Planar Silicon Transistor2SC5305LSInverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1200V).unit:mm High reliability (Adoption of HVP process).2079D Adoption of MBIT process.[2SC5305]10.0 4.53.22.80.91.2 1.20.75 0.71:Base1 2 32:Collector3:EmitterSpecifications2.55

Ordering number:EN5884NPN Triple Diffused Planar Silicon Transistor2SC5305Inverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1200V).unit:mm High reliability (Adoption of HVP process).2079B Adoption of MBIT process.[2SC5305]4.510.02.83.20.90.71.20.751:Base1 2 32:Collector3:Emitter2.55 2.55SANYO:TO-220FI

UTC 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High hFE for Low base drive requirement * Suitable for half bridge light ballast Applications 1* Built-in Free-wheeling Diode makes it specially suitable for light ballast Applications * Well controlled storage-time spread for all range of hFE TO-220 1: Base 2: Colle

isc Silicon NPN Power Transistor 2SC5305DESCRIPTIONHigh Breakdown Voltage:V = 1200V (Min)(BR)CBOHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for inverter lighting applications.Absolute maximum ratings (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1200 VCBOV Collect