2SC5322 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC5322 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5322 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.4dB (f = 2 GHz) High gain: Ga = 10dB (f = 2 GHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 8 VCollector-emitter voltage VCEO 5 VEmitter-base voltage VEBO 1.5 V

2SC5322FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5322FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.4dB (f = 2 GHz) High gain: |S |2 = 10dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 8 VCollector-emitter voltage VCEO 5 VEmitter-base voltag

SMD Type TransistorsNPN Transistors2SC5320SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=10mA1 2 Collector Emitter Voltage VCEO=5V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 8 Collecto