2SC5322 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC5322
SMD Transistor Code: MU
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 8 V
Maximum Collector-Emitter Voltage |Vce|: 5 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 9000 MHz
Collector Capacitance (Cc): 0.45 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: 2-2H1A
2SC5322 Transistor Equivalent Substitute - Cross-Reference Search
2SC5322 Datasheet (PDF)
2sc5322.pdf
2SC5322 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5322 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.4dB (f = 2 GHz) High gain: Ga = 10dB (f = 2 GHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 8 VCollector-emitter voltage VCEO 5 VEmitter-base voltage VEBO 1.5 V
2sc5322ft.pdf
2SC5322FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5322FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.4dB (f = 2 GHz) High gain: |S |2 = 10dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 8 VCollector-emitter voltage VCEO 5 VEmitter-base voltag
2sc5320.pdf
SMD Type TransistorsNPN Transistors2SC5320SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=10mA1 2 Collector Emitter Voltage VCEO=5V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 8 Collecto
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
