2SC5322 Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

2SC5322 Datasheet. Specs and Replacement

Type Designator: 2SC5322 📄📄

SMD Transistor Code: MU

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 8 V

Maximum Collector-Emitter Voltage |Vce|: 5 V

Maximum Emitter-Base Voltage |Veb|: 1.5 V

Maximum Collector Current |Ic max|: 0.01 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 9000 MHz

Collector Capacitance (Cc): 0.45 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: 2-2H1A

2SC5322 Substitution

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2SC5322 datasheet

..1. Size:121K toshiba

2sc5322.pdf pdf_icon

2SC5322 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5322 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure NF = 1.4dB (f = 2 GHz) High gain Ga = 10dB (f = 2 GHz) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 8 V Collector-emitter voltage VCEO 5 V Emitter-base voltage VEBO 1.5 V... See More ⇒

0.1. Size:124K toshiba

2sc5322ft.pdf pdf_icon

2SC5322FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5322FT VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure NF = 1.4dB (f = 2 GHz) High gain S 2 = 10dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 8 V Collector-emitter voltage VCEO 5 V Emitter-base voltag... See More ⇒

8.1. Size:122K toshiba

2sc5323.pdf pdf_icon