2SC5717 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC5717  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 75 W

Tensión colector-base (Vcb): 1500 V

Tensión colector-emisor (Vce): 700 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 21 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 2 MHz

Capacitancia de salida (Cc): 240 pF

Ganancia de corriente contínua (hFE): 4.8

Encapsulados: 2-16E3A

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2SC5717 datasheet

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 2sc5717.pdf pdf_icon

2SC5717

2SC5717 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5717 Horizontal Deflection Output for Super High Resolution Unit mm Display, Color TV, Digital TV. High Speed Switching Applications. High voltage VCBO = 1500 V Low saturation voltage V = 3 V (max) CE (sat) High speed t (2) = 0.1 s (typ.) f Maximum Ratings (Tc = = 25 C) = = Charact

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2SC5717

2SC5716 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5716 Horizontal Deflection Output for High Resolution Display, Unit mm Color TV High voltage V = 1700 V CBO High speed t (2) = 0.2 s (typ.) f Collector metal (fin) is fully covered with mold resin. Maximum Ratings (Tc = = 25 C) = = Characteristics Symbol Rating Unit Collector-base vo

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 2sc5714.pdf pdf_icon

2SC5717

2SC5714 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5714 Industrial Applications High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 400 to 1000 (I = 0.5 A) C Low collector-emitter saturation voltage V = 0.15 V (max) CE (sat) High-speed switching t = 90 ns (typ.) f Maximum Ratings (T

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 2sc5713.pdf pdf_icon

2SC5717

2SC5713 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5713 Industrial Applications High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 400 to 1000 (I = 0.5 A) C Low collector-emitter saturation voltage V = 0.15 V (max) CE (sat) High-speed switching t = 50 ns (typ.) f Maximum Ratings (T

MOSTRAR MÁS

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