2SC5717
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5717
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 75
W
Tensión colector-base (Vcb): 1500
V
Tensión colector-emisor (Vce): 700
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 21
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 2
MHz
Capacitancia de salida (Cc): 240
pF
Ganancia de corriente contínua (hfe): 4.8
Paquete / Cubierta: 2-16E3A
Búsqueda de reemplazo de transistor bipolar 2SC5717
2SC5717
Datasheet (PDF)
..1. Size:411K toshiba
2sc5717.pdf 
2SC5717 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5717 Horizontal Deflection Output for Super High Resolution Unit: mm Display, Color TV, Digital TV. High Speed Switching Applications. High voltage: VCBO = 1500 V Low saturation voltage: V = 3 V (max) CE (sat) High speed: t (2) = 0.1 s (typ.) fMaximum Ratings (Tc == 25C) ==Charact
8.1. Size:304K toshiba
2sc5716.pdf
2SC5716 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5716 Horizontal Deflection Output for High Resolution Display, Unit: mm Color TV High voltage: V = 1700 V CBO High speed: t (2) = 0.2 s (typ.) f Collector metal (fin) is fully covered with mold resin. Maximum Ratings (Tc == 25C) ==Characteristics Symbol Rating UnitCollector-base vo
8.2. Size:166K toshiba
2sc5714.pdf
2SC5714 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5714 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (I = 0.5 A) C Low collector-emitter saturation voltage: V = 0.15 V (max) CE (sat) High-speed switching: t = 90 ns (typ.) fMaximum Ratings (T
8.3. Size:159K toshiba
2sc5713.pdf
2SC5713 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5713 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (I = 0.5 A) C Low collector-emitter saturation voltage: V = 0.15 V (max) CE (sat) High-speed switching: t = 50 ns (typ.) fMaximum Ratings (T
8.4. Size:146K toshiba
2sc5712.pdf
2SC5712 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5712 High-Speed Switching Applications Unit: mmDC-DC Converter Applications DC-AC Converter Applications High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) High-speed switching: tf = 120 ns (typ.) Absolute Maximum Ratings (Ta = 25C) C
8.5. Size:37K sanyo
2sa2044 2sc5710.pdf
Ordering number : ENN69152SA2044 / 2SC5710PNP / NPN Epitaxial Planar Silicon Transistors2SA2044 / 2SC5710DC / DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit : mm2045B[2SA2044 / 2SC5710]Features6.5 Adoption of FBET and MBIT processes.2.35.00.54 Large current capacitance. Low collecto
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