2SC5717 Datasheet. Specs and Replacement

Type Designator: 2SC5717  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 75 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 700 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 21 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 2 MHz

Collector Capacitance (Cc): 240 pF

Forward Current Transfer Ratio (hFE), MIN: 4.8

Noise Figure, dB: -

Package: 2-16E3A

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2SC5717 datasheet

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2SC5717

2SC5717 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5717 Horizontal Deflection Output for Super High Resolution Unit mm Display, Color TV, Digital TV. High Speed Switching Applications. High voltage VCBO = 1500 V Low saturation voltage V = 3 V (max) CE (sat) High speed t (2) = 0.1 s (typ.) f Maximum Ratings (Tc = = 25 C) = = Charact... See More ⇒

 8.1. Size:304K  toshiba

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2SC5717

2SC5716 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5716 Horizontal Deflection Output for High Resolution Display, Unit mm Color TV High voltage V = 1700 V CBO High speed t (2) = 0.2 s (typ.) f Collector metal (fin) is fully covered with mold resin. Maximum Ratings (Tc = = 25 C) = = Characteristics Symbol Rating Unit Collector-base vo... See More ⇒

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 2sc5714.pdf pdf_icon

2SC5717

2SC5714 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5714 Industrial Applications High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 400 to 1000 (I = 0.5 A) C Low collector-emitter saturation voltage V = 0.15 V (max) CE (sat) High-speed switching t = 90 ns (typ.) f Maximum Ratings (T... See More ⇒

 8.3. Size:159K  toshiba

 2sc5713.pdf pdf_icon

2SC5717

2SC5713 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5713 Industrial Applications High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 400 to 1000 (I = 0.5 A) C Low collector-emitter saturation voltage V = 0.15 V (max) CE (sat) High-speed switching t = 50 ns (typ.) f Maximum Ratings (T... See More ⇒

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Detailed specifications: 2SC5689, 2SC5690, 2SC5695, 2SC5698, 2SC5699, 2SC5700, 2SC5702, 2SC5716, 2SA1837, 2SC5725, 2SC5730, 2SC5739, 2SC5748, 2SC5757, 2SC5758, 2SC5759, 2SC5764

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