All Transistors. 2SC5717 Datasheet

 

2SC5717 Datasheet and Replacement


   Type Designator: 2SC5717
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 75 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Collector-Emitter Voltage |Vce|: 700 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 21 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 2 MHz
   Collector Capacitance (Cc): 240 pF
   Forward Current Transfer Ratio (hFE), MIN: 4.8
   Noise Figure, dB: -
   Package: 2-16E3A
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2SC5717 Datasheet (PDF)

 ..1. Size:411K  toshiba
 2sc5717.pdf pdf_icon

2SC5717

2SC5717 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5717 Horizontal Deflection Output for Super High Resolution Unit: mm Display, Color TV, Digital TV. High Speed Switching Applications. High voltage: VCBO = 1500 V Low saturation voltage: V = 3 V (max) CE (sat) High speed: t (2) = 0.1 s (typ.) fMaximum Ratings (Tc == 25C) ==Charact

 8.1. Size:304K  toshiba
 2sc5716.pdf pdf_icon

2SC5717

2SC5716 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5716 Horizontal Deflection Output for High Resolution Display, Unit: mm Color TV High voltage: V = 1700 V CBO High speed: t (2) = 0.2 s (typ.) f Collector metal (fin) is fully covered with mold resin. Maximum Ratings (Tc == 25C) ==Characteristics Symbol Rating UnitCollector-base vo

 8.2. Size:166K  toshiba
 2sc5714.pdf pdf_icon

2SC5717

2SC5714 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5714 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (I = 0.5 A) C Low collector-emitter saturation voltage: V = 0.15 V (max) CE (sat) High-speed switching: t = 90 ns (typ.) fMaximum Ratings (T

 8.3. Size:159K  toshiba
 2sc5713.pdf pdf_icon

2SC5717

2SC5713 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5713 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (I = 0.5 A) C Low collector-emitter saturation voltage: V = 0.15 V (max) CE (sat) High-speed switching: t = 50 ns (typ.) fMaximum Ratings (T

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Keywords - 2SC5717 transistor datasheet

 2SC5717 cross reference
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