2SA1813 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA1813  📄📄 

Código: KS

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 25 V

Tensión emisor-base (Veb): 15 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 210 MHz

Capacitancia de salida (Cc): 2.6 pF

Ganancia de corriente contínua (hFE): 500

Encapsulados: MCP

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2SA1813 datasheet

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2SA1813

Ordering number EN3972 PNP Epitaxial Planar Silicon Transistor 2SA1813 Low-Frequency General-Purpose Amplifier Driver, Muting Circuit Applications Features Package Dimensions Very small-sized package permitting 2SA1813- unit mm applied sets to be made smaller and slimmer. 2059A Adoption of FBET process. [2SA1813] High DC current gain (hFE=500 to 1200). Low collector

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2SA1813

SMD Type Transistors PNP Transistors 2SA1813 Features High DC current gain (hFE=500 to 1200). Low collector-to-emitter saturation voltage High VEBO 1 Base 2 Emitter 3 Colletor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -25 V Emitter - Base Voltage VEBO -15 Collector

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2SA1813

 8.2. Size:84K  sanyo
2sa1814.pdf pdf_icon

2SA1813

Ordering number EN3973 PNP Epitaxial Planar Silicon Transistor 2SA1814 Low-Frequency General-Purpose Amplifier Driver, Muting Circuit Applications Features Package Dimensions Very small-sized package permitting 2SA1814- unit mm applied sets to be made smaller and slimmer. 2018B Adoption of FBET process. [2SA1814] High DC current gain (hFE=500 to 1200). Low collector

Otros transistores... 2SA1783, 2SA1784, 2SA1785, 2SA1786, 2SA1787, 2SA1798, 2SA1807, 2SA1812, BC558, 2SA1814, 2SA1816, 2SA1823, 2SA1824, 2SA1825, 2SA1826, 2SA1830, 2SA1831