2SA1814 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA1814  📄📄 

Código: KS

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 25 V

Tensión emisor-base (Veb): 15 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 210 MHz

Capacitancia de salida (Cc): 2.6 pF

Ganancia de corriente contínua (hFE): 500

Encapsulados: CP

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2SA1814 datasheet

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2SA1814

Ordering number EN3973 PNP Epitaxial Planar Silicon Transistor 2SA1814 Low-Frequency General-Purpose Amplifier Driver, Muting Circuit Applications Features Package Dimensions Very small-sized package permitting 2SA1814- unit mm applied sets to be made smaller and slimmer. 2018B Adoption of FBET process. [2SA1814] High DC current gain (hFE=500 to 1200). Low collector

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2sa1811.pdf pdf_icon

2SA1814

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2sa1815.pdf pdf_icon

2SA1814

Ordering number EN4625 PNP Epitaxial Planar Silicon Transistor 2SA1815 FM, RF, MIX, IF Amplifier, High-Frequency General-Purpose Amplifier Applications Features Package Dimensions High power gain PG=25dB (f=100MHz). unit mm High cutoff frequency ; fT=750MHz typ. 2018A Low collector-to-emitter saturation voltage. [2SA1815] Complementary pair with the 2SC4432. C C

 8.3. Size:83K  sanyo
2sa1813.pdf pdf_icon

2SA1814

Ordering number EN3972 PNP Epitaxial Planar Silicon Transistor 2SA1813 Low-Frequency General-Purpose Amplifier Driver, Muting Circuit Applications Features Package Dimensions Very small-sized package permitting 2SA1813- unit mm applied sets to be made smaller and slimmer. 2059A Adoption of FBET process. [2SA1813] High DC current gain (hFE=500 to 1200). Low collector

Otros transistores... 2SA1784, 2SA1785, 2SA1786, 2SA1787, 2SA1798, 2SA1807, 2SA1812, 2SA1813, TIP31, 2SA1816, 2SA1823, 2SA1824, 2SA1825, 2SA1826, 2SA1830, 2SA1831, 2SA1836