2SA1973 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1973
Código: NS
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Capacitancia de salida (Cc): 32 pF
Ganancia de corriente contínua (hfe): 135
Paquete / Cubierta: CP
Búsqueda de reemplazo de transistor bipolar 2SA1973
2SA1973 Datasheet (PDF)
2sa1973 2sc5310.pdf
Ordering number:ENN5613PNP/NPN Epitaxial Planar Silicon Transistors2SA1973/2SC5310DC/DC Converter ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm Large current capacitance.2018B Low collector-to-emitter saturation voltage.[2SA1973/2SC5310] High-speed switching.0.4 Ultrasmall package facilitates miniaturization in end 0.16
2sa1978.pdf
DATA SHEETPRELIMINARY DATA SHEETSilicon Transistor2SA1978PNP EPITAXIAL SILICON TRANSISTORMICROWAVE AMPLIFIERFEATURES PACKAGE DIMENSIONSHigh f (in milimeters)T_2.8+0.2f = 5.5 GHz TYP.T+0.1| S | 2 = 10.0 dB TYP. @f = 1.0 GHz, V = -10 V, I = -15 mA 1.5 0.65 0.1521e CE CHigh speed switching characteristicsEquivalent NPN transistor is the 2SC2
2sa1977.pdf
DATA SHEETPRELIMINARY DATA SHEETSilicon Transistor2SA1977PNP EPITAXIAL SILICON TRANSISTORMICROWAVE AMPLIFIERFEATURES PACKAGE DIMENSION (in millimeters)_ 2.8+0.2High fT+0.1f = 8.5 GHz TYP.T1.5 0.65 0.15High gain| S | 2 = 12.0 dB TYP. @f = 1.0 GHz, V = -8 V, I = -20 mA21e CE CHigh-speed switching characterstics2Equivalent NPN transistor
2sa1979uf.pdf
2SA1979UFPNP Silicon TransistorDescription PIN Connection Medium power amplifier 3 Features Large collector current : IC=-500mA 1 Suitable for low-Voltage operation 2because of its low saturation voltage Complementary pair with 2SC5342UF SOT-323F Ordering Information Type NO. Marking Package Code A 2SA1979UF SOT-323F Dev
2sa1979s.pdf
2SA1979S PNP Silicon Transistor MEDIUM POWER AMPLIFIER CFeatures Large collector current : I =-500mA CMaxBC Suitable for low-Voltage operation because of its low saturation voltage B Complementary pair with 2SC5342S E EOrdering Information SOT-23 Part Number Marking Package AA 2SA1979S SOT-23 * Device Code
2sa1979u.pdf
2SA1979UPNP Silicon TransistorDescription PIN Connection Medium power amplifier Features 3 Large collector current : ICMax=-500mA Suitable for low-Voltage operation 1 2because of its low saturation voltage Complementary pair with 2SC5342U SOT-323 Ordering Information Type NO. Marking Package Code A 2SA1979U SOT-323
2sa1979n.pdf
2SA1979NSemiconductor Semiconductor PNP Silicon TransistorDescription Medium power amplifier Features Large collector current : IC = -500mA Low collector saturation voltage enabling low-voltage operation : VCE(sat) = -0.25 Max. Complementary pair with 2SC5342N Ordering Information Type NO. Marking Package Code 2SA1979N A1979 TO-92N Outline Dimensio
2sa1979m.pdf
2SA1979MSemiconductor Semiconductor PNP Silicon TransistorDescription Medium power amplifier Features Large collector current : ICMax=-500mA Suitable for low-Voltage operation because of its low saturation voltage Complementary pair with 2SC5342M Ordering Information Type NO. Marking Package Code 2SA1979M 1979 TO-92M Outline Dimensions unit : mm
2sa1979.pdf
2SA1979Semiconductor Semiconductor PNP Silicon TransistorDescription PIN Connection Medium power amplifier EFeatures B Large collector current : ICMax=-500mA Suitable for low-Voltage operation because of its low saturation voltage C Complementary pair with 2SC5342 TO-92 Ordering Information Type NO. Marking Package Code 2SA1979 A1979 TO-92
2sa1979sf.pdf
2SA1979SFPNP Silicon TransistorDescription PIN Connection Medium power amplifier 3 Features Large collector current : ICMax=-500mA 1 Suitable for low-Voltage operation because of its low saturation voltage 2 Complementary pair with 2SC5342SF SOT-23F Ordering Information Type NO. Marking Package Code AA 2SA1979SF SOT-23F
2sa1979uf.pdf
SMD Type TransistorsPNP Transistors2SA1979UF Features Large collector current : ICMax=-500mA Complements to 2SC5342UF1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -32 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -500 mA
2sa1971.pdf
SMD Type TransistorsPNP Transistors2SA1971SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-0.5A Collector Emitter Voltage VCEO=-400V0.42 0.10.46 0.1 Marking: A*L1.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Collector - Emitter Voltage VCEO -400 V
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BC237-92 | 2N2922 | BSV15-16 | KSP2222ABU
History: BC237-92 | 2N2922 | BSV15-16 | KSP2222ABU
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050