2SB1612 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Transistor 2SB1612 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SD2474 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 45 zine packing. 0.4 0.08 0.4 0.04 0.5

Transistor 2SB1612 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SD2474 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 45 zine packing. 0.4 0.08 0.4 0.04 0.5

SMD Type Transistors PNP Transistors 2SB1612 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-10V Complementary to 2SD2474 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -10 Collector - Emitter Voltage VCEO

2SB1616 Transistors Transistors 2SD2478 (SPEC-B426) (94L-1129-D426) 301

2SB1682 TOSHIBA Transistor Silicon PNP Triple Diffused Type (Darlington power transistor) 2SB1682 Unit mm Power Amplifier Applications High-Power Switching Applications High-breakdown voltage VCEO = -160 V (min) Complementary to 2SD2636 Maximum Ratings (Tc = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO -160 V Collector-emitter voltag

Ordering number ENN6960 2SB1683 / 2SD2639 2SB1683 PNP Epitaxial Planar Silicon Transistor 2SD2639 NPN Triple Diffused Planar Silicon Transistor 2SB1683 / 2SD2639 140V / 12A, AF 60W Output Applications Features Package Dimensions Wide ASO because of on-chip ballast resistance. unit mm Good dependence of fT on current and good HF 2010C characteristic. [2SB1683 / 2SD26

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

2SB1691 Silicon PNP Epitaxial Planer Low Frequency Power Amplifier REJ03G0482-0200 (Previous ADE-208-1387A (Z)) Rev.2.00 Dec.09.2004 Features Small size package MPAK (SC 59A) Large Maximum current IC = 1 A Low collector to emitter saturation voltage VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/ 0.05 A) High power dissipation PC = 800 mW (when usi

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet 2SB1691 R07DS0272EJ0300 (Previous REJ03G0482-0200) Silicon PNP Epitaxial Planer Rev.3.00 Low Frequency Power Amplifier Mar 28, 2011 Features Small size package MPAK (SC 59A) Large Maximum current IC = 1 A Low collector to emitter saturation voltage VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/ 0.05 A) High power dissipation

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEET SILICON TRANSISTOR 2SB1658 AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS FEATURES PACKAGE DIMENSIONS Low VCE(sat) in millimeters (inches) VCE(sat) = -0.15 V Max (@lC/lB = 1.0 A/50 mA) High DC Current Gain 8.5 MAX. 2.8 MAX. (0.334 MAX.) (0.110 MAX.) hEF = 150 to 600 (@VCE = -2.0 V, lC = -1.0 A) 3.2 0.2 ( 0.126) ABSOLUTE MAXIMUM R

DATA SHEET SILICON TRANSISTOR 2SB1657 AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS FEATURES PACKAGE DIMENSIONS Low VCE(sat) in millimeters (inches) VCE(sat) = -0.15 V Max (@lC/lB = 0.5 A/25 mA) High DC Current Gain 8.5 MAX. 2.8 MAX. (0.334 MAX.) (0.110 MAX.) hFE = 150 to 600 (@VCE = -2.0 V, lC = -0.5 A) 3.2 0.2 ( 0.126) ABSOLUTE MAXIMUM R

DATA SHEET SILICON POWER TRANSISTOR 2SB1669 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from ORDERING INFORMATION the output of an IC. This transistor is ideal for OA and FA equipment Part No. Package such as motor and solenoid drivers. 2SB1669 TO-220AB 2SB1669-S TO-262 FEATURES 2SB1669-Z TO-220SMD High

DATA SHEET SILICON TRANSISTOR 2SB1628 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SB1628 features high current capacity in small dimension PACKAGE DRAWING (UNIT mm) and is ideal for DC/DC converters and mortor drivers. FEATURES High current capacitance Low collector saturation voltage QUALITY GRADES Standard Please re

2SB1690 Transistors General purpose amplification(-12V, -2A) 2SB1690 Applications External dimensions (Unit mm) Low frequency amplifier TSMT3 Deiver 1.0MAX 2.9 0.85 0.4 0.7 Features (3) 1) A collector current is large. 2) Collector saturation voltage is low. (1) (2) VCE(sat) max. -180mV 0.95 0.95 0.16 1.9 at IC= -1A / IB= -50mA (1) Base (2) Emitter Ea

2SB1695K Datasheet Datasheet General purpose amplification(-30V,-1.5A) lOutline l SOT-346 Parameter Value SC-59 VCEO -30V IC -1.5A SMT3 lFeatures lInner circuit l l 1) Collector current is large. 2) VCE(sat) -370mV at IC= -1A / IB= -50mA 3) Complementary NPN Types 2SD2657K lApplication l LOW FREQUENCY AMPLIFIER, DRIVER

2SB1676 Transistors Medium Power Transistor (Motor, Relay drive) (-80V, -4A) 2SB1676 External dimensions (Units mm) Features 1) Darlington connection for a high hFE. 2) Built-in resistor between base and emitter. 10.0 4.5 3) Built-in damper diode. 3.2 2.8 4) Complements the 2SD2618. 1.2 1.3 0.8 Absolute maximum ratings (Ta = 25 C) 0.75 2.54 2.54 2.6 (1) Base(Gate)

2SB1694 Datasheet General purpose amplification (-30V, -1A) lOutline l SOT-323 Parameter Value SC-70 VCEO -30V IC -1A UMT3 lFeatures lInner circuit l l 1)A collector current is large 2)Collector-Emitter saturation voltage is low. VCE(sat) -380mV at IC=-500mA/IB=-25mA 3)Complements the 2SD2656. lApplication l LOW FREQUENC

2SB1674 Transistors Power Transistor (-120V, -6A) 2SB1674 External dimensions (Units mm) Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 10.0 4.5 3) Built-in damper diode. 3.2 2.8 4) Complements the 2SD2615. 1.2 1.3 0.8 Absolute maximum ratings (Ta=25 C) 0.75 ( ) 2.54 2.54 2.6 (1) Base Gate (1) (2) (3) ( )

2SB1695 Transistors Low frequency amplifier 2SB1695 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 (3) Features 1) A collector current is large. 2) VCE(sat) -370mV ( ) ( ) 1 2 0.95 0.95 at IC =-1A / IB =-50mA 0.16 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Packaging spec

2SB1672 Transistors Power Transistor (-80V, -7A) 2SB1672 External dimensions (Units mm) Features 1) Low saturation voltage. (Typ. VCE(sat) = -0.3V at IC / IB =-4A / -0.4A) 10.0 4.5 3.2 2.8 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25 C). 4) Wide SOA (safe operating area). 1.2 1.3 5) Complements the 2SD2611. 0.8 0.75 2.54 2.54 2.6 (1) (2) (3) (

2SB1695KFRA AEC-Q101 Qualified 2SB1695KFRA

2SB1694 2SB1694FRA Datasheet PNP -1A -30V Low Frequency Amplifier Transistors AEC-Q101 Qualified lOutline UMT3 Parameter Value Collector VCEO -30V Base IC -1A Emitter 2SB1694FRA 2SB1694 SOT-323 (SC-70) lFeatures 1) A Collecotr current is large.General Purpose. 2) Collector saturation voltage is low. VCE(sat) is Max. -380mV At IC= -500mA, IB= -25mA 3) Complementary NPN Ty

2SB1644 Transistors Power Transistor (-80V, -4A) 2SB1644 Features External dimensions (Units mm) 1) Low saturation voltage. 13.1 3.2 (Typ. VCE(sat) = -0.5V at IC / IB = -3A / -0.3A) 2) Excellent DC current gain characteristics. 8.8 Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V 0.5Min

2SB1644JFRA 2SB1644J Datasheet PNP -4A -80V Power Transistor AEC-Q101 Qualified Outline LPT(S) (D2-PAK) Parameter Value Collector VCEO 80V IC 4A Base Emitter 2SB1644J 2SB1644JFRA Features (SC-83) 1) Suitable for Power Driver 2) Low VCE(sat) VCE(sat)= 1.5V(Max.) (IC/IB= 3A/ 300mA) 3) Lead Free/RoHS Compliant. Inner circuit Collector Applicatio

2SB1675 Transistors Power Transistor (-80V, -10A) 2SB1675 Features External dimensions (Units mm) 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 10.0 4.5 3) Built-in damper diode. 3.2 2.8 1.2 1.3 Absolute maximum retings (Ta=25 C) 0.8 Parameter Symbol Limits Unit 0.75 2.54 2.54 2.6 Collector-base voltage VCBO -80 V (

2SB1697 Transistors Low Frequency Amplifier (-12V, -2A) 2SB1697 External dimensions (Unit mm) Features Low VCE(sat) 4.0 VCE(sat) -180mV 1.0 2.5 0.5 (IC /IB=-1A/-50mA) (1) (2) (3) Each lead has same dimensions Abbreviated symbol FV ROHM MPT3 (1)Base JEITA SC-62 (2)Collector JEDEC SOT-89 (3)Emitter Packaging specifications Absolute maximum ratings

2SB1644J Datasheet PNP -4A -80V Power Transistor Outline LPT(S) (D2-PAK) Parameter Value Collector VCEO 80V IC 4A Base Emitter 2SB1644J Features (SC-83) 1) Suitable for Power Driver 2) Low VCE(sat) VCE(sat)= 1.5V(Max.) (IC/IB= 3A/ 300mA) 3) Lead Free/RoHS Compliant. Inner circuit Collector Applications Automotive power driver , LED driver Bas

2SB1689 Datasheet General purpose amplification (-12V, -1.5A) lOutline l SOT-323 Parameter Value SC-70 VCEO -12V IC -1.5A UMT3 lFeatures lInner circuit l l 1)A collector current is large 2)Collector saturation voltage is low. VCE(sat) -200mV at IC=-500mA/IB=-25mA lApplication l LOW FREQUENCY AMPLIFIER, DRIVER lPackaging

2SB1698 Transistors Low frequency amplifier 2SB1698 Dimensions (Unit mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) -370mV at IC =-1A / IB =-50mA Each lead has same dimensions ROHM MPT3 (1)Base JEITA SC-62 (2)Collector JEDEC SOT-89 (3)Emitter Abbreviated symbol FL Packaging specifications

2SB1668 Transistors Power Transistor (-100V, -8A) 2SB1668 External dimensions (Units mm) Features 1) Darlington connection for high DC current gain. 10.0 4.5 2) Built-in resistor between base and emitter. 3.2 2.8 3) Built-in damper diode. 4) Complements the 2SD2607. 1.2 1.3 0.8 ( ) (1) Base Gate 0.75 2.54 2.54 2.6 Absolute maximum ratings (Ta = 25 C) (1) (2) (3)

2SB1690K Transistors General purpose amplification(-12V, -2A) 2SB1690K External dimensions (Units mm) Applications Low frequency amplifier Deiver Features 1.6 1) A collector current is large. 2.8 2) Collector saturation voltage is low. VCE(sat) -180mV 0.3Min. at IC= -1A / IB= -50mA Each lead has same dimensions (1) Emitter ROHM SMT3 EIAJ SC-59 (2) Ba

Power Transistors 2SB1605, 2SB1605A Silicon PNP epitaxial planar type For low-freauency power amplification Unit mm Features High forward current transfer ratio hFE which has satisfactory linearity 4.6 0.2 Low collector to emitter saturation voltage VCE(sat) 9.9 0.3 2.9 0.2 Full-pack package with outstanding insulation, which can be in- 3.2 0.1 stalled to the heat sin

Transistors 2SB1679 Silicon PNP epitaxial planer type Unit mm For low-frequency amplification 0.3+0.1 0.15+0.10 0.05 0.0 3 Features Large current capacitance Low collector to emitter saturation voltage 1 2 Small type package, allowing downsizing and thinning of the (0.65) (0.65) equipment. 1.3 0.1 2.0 0.2 10 Absolute Maximum Ratings Ta = 25 C Parame

Power Transistors 2SB1604, 2SB1604A Silicon PNP epitaxial planar type For low-voltage switching Unit mm Features 4.6 0.2 Low collector to emitter saturation voltage VCE(sat) 9.9 0.3 2.9 0.2 3.2 0.1 High-speed switching Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw Absolute Maximum Ratings (TC=25 C) 2.6 0.1 1

Power Transistors 2SB1623 Silicon PNP epitaxial planar type For power amplification Unit mm 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 High forward current transfer ratio hFE Satisfactory linearity of forward current transfer ratio hFE Dielectric breakdown voltage of the package > 5 kV 1.4 0.2 2.6 0.1 1.6 0.2 Absolute Maximum Ratings Ta = 25 C 0.8

Transistors 2SB1678 Silicon PNP epitaxial planer type Unit mm For low-frequency amplification 4.5 0.1 1.6 0.2 1.5 0.1 Features Low collector to emitter saturation voltage VCE(sat) Large Peak collector current ICP 3 21 Mini power type package, allowing downsizing and thinning of the 0.4 0.08 0.5 0.08 0.4 0.04 equipment and automatic insertion through the tape pac

Power Transistors 2SB1643 Silicon PNP epitaxial planar type Unit mm 8.5 0.2 3.4 0.3 For power amplification 6.0 0.5 1.0 0.1 Features 1.5max. 1.1max. High collector to emitter VCEO High collector power dissipation PC 0.8 0.1 0.5max. N type package enabling direct soldering of the radiating fin to 2.54 0.3 the printed circuit board, etc. of small electronic equipment.

Power Transistors 2SB1645 Silicon PNP triple diffusion planar type Darlington Unit mm For power amplification 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features Satisfactory forward current transfer ratio hFE characteristics Wide area of safe operation (ASO) 5 5 Optimum for the output stage of a HiFi audio amplifier (4.0) 5 2.0 0.2 1.1 0.1 Absolute Maximum

Power Transistors 2SB1623A Silicon PNP epitaxial planar type For power amplification Unit mm 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 High forward current transfer ratio hFE Satisfactory linearity of forward current transfer ratio hFE Dielectric breakdown voltage of the package > 5 kV Absolute Maximum Ratings Ta = 25 C 1.4 0.2 2.6 0.1 1.6 0.2 Pa

Power Transistors 2SB1653 Silicon PNP triple diffusion planar type For power switching Unit mm 7.5 0.2 4.5 0.2 Features 90 High collector to emitter VCEO 0.65 0.1 0.85 0.1 Low collector to emitter saturation voltage VCE(sat) Allowing automatic insertion with radial taping 1.0 0.1 0.8C 0.8C 0.7 0.1 0.7 0.1 Absolute Maximum Ratings (TC=25 C) Parameter Symbol Rati

Transistors 2SB1693 Silicon PNP epitaxial planar type For general amplification Unit mm 0.40+0.10 0.05 0.16+0.10 0.06 Features 3 Large collector current IC Mini type package, allowing downsizing of the equipment and auto- matic insertion through the tape packing and the magazine packing 1 2 (0.95) (0.95) 1.9 0.1 2.90+0.20 0.05 Absolute Maximum Ratin

Power Transistors 2SB1638, 2SB1638A Silicon PNP epitaxial planar type Unit mm 7.0 0.3 3.5 0.2 For low-voltage switching 3.0 0.2 Features Low collector to emitter saturation voltage VCE(sat) 1.1 0.1 0.85 0.1 Satisfactory linearity of foward current transfer ratio hFE 0.75 0.1 0.4 0.1 I type package enabling direct soldering of the radiating fin to the printed circu

Transistor 2SB1651 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit mm 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low noise voltage NV. High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as 0.65 max. well as stand-alone fixing to the printed circuit board. +0.1 0.45 0.05 A

Power Transistors 2SB1631 Silicon PNP epitaxial planar type For power amplification Unit mm 10.0 0.2 5.0 0.1 1.0 0.2 Features High forward current transfer ratio hFE which has satisfactory linearity Low collector-emitter saturation voltage VCE(sat) 1.2 0.1 Allowing automatic insertion with radial taping C 1.0 1.48 0.2 2.25 0.2 0.65 0.1 0.65 0.1 Abs

Power Transistors 2SB1629 Silicon PNP epitaxial planar type For power amplification Unit mm 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw 2.6 0.1 1.2 0.15 1.45 0.15

Transistors 2SB1699 Silicon PNP epitaxial planar type Unit mm For power amplification 4.5 0.1 1.6 0.2 1.5 0.1 Features Low collector-emitter saturation voltage VCE(sat) Mini Power type package, allowing downsizing of the equipment 1 23 and automatic insertion through the tape packing and the maga- 0.4 0.08 0.5 0.08 0.4 0.04 zine packing. 1.5 0.1 3 Absolu

Power Transistors 2SB1607 Silicon PNP epitaxial planar type For power switching Unit mm Complementary to 2SD2469 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be in- 2.6 0.1 s

Power Transistors 2SB1606 Silicon PNP epitaxial planar type For power switching Unit mm 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be in- 2.6 0.1 stalled to the heat sink wi

Power Transistors 2SB1603, 2SB1603A Silicon PNP epitaxial planar type For low-voltage switching Unit mm 4.6 0.2 Features 9.9 0.3 2.9 0.2 Low collector to emitter saturation voltage VCE(sat) 3.2 0.1 High-speed switching Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw Absolute Maximum Ratings (TC=25 C) 2.6 0.1 1.

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1658 DESCRIPTION With TO-126 package Low collector saturation voltage High DC current gain APPLICATIONS For audio frequency amplifier and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMB

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1657 DESCRIPTION With TO-126 package Low collector saturation voltage High DC current gain APPLICATIONS For audio frequency amplifier and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMB

JMnic Product Specification Silicon PNP Power Transistors 2SB1658 DESCRIPTION With TO-126 package Low collector saturation voltage High DC current gain APPLICATIONS For audio frequency amplifier and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER

JMnic Product Specification Silicon PNP Power Transistors 2SB1640 DESCRIPTION With ITO-220 package Low collector saturation voltage Complement to type 2SD2525 APPLICATIONS Audio frequency power amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITI

JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1625 DESCRIPTION With TO-3PML package Complement to type 2SD2494 APPLICATIONS Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Maximum absolute ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO

JMnic Product Specification Silicon PNP Power Transistors 2SB1657 DESCRIPTION With TO-126 package Low collector saturation voltage High DC current gain APPLICATIONS For audio frequency amplifier and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER

JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1626 DESCRIPTION With TO-220F package Complement to type 2SD2495 APPLICATIONS For audio,series regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CON

JMnic Product Specification Silicon PNP Power Transistors 2SB1642 DESCRIPTION With TO-220F package Low collector saturation voltage VCE(SAT)=-1.5V(Max) at IC=-2.5A,IB=-0.25A Collector power dissipation PC=25W(TC=25 ) APPLICATIONS Audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-220F) and

JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1647 DESCRIPTION With TO-3PN package Complement to type 2SD2560 APPLICATIONS Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER

JMnic Product Specification Silicon PNP Power Transistors 2SB1655 DESCRIPTION With TO-220F package Excellent DC current gain characteristics Low collector saturation voltage Wide area of safe operation Complement to type 2SD2394 PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 )

JMnic Product Specification Silicon PNP Power Transistors 2SB1604 2SB1604A DESCRIPTION With TO-220F package Low collector saturation voltage High speed switching APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMET

E (70 ) B Darlington 2SB1625 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2494) Application Audio, Series Regulator and General Purpose External Dimensions FM100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SB1625 Symbol Conditions 2SB1625 Unit Unit 0.2 0.2 5.5 15.6 VCBO 110 ICBO VCB=

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E (70 ) B Darlington 2SB1659 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2589) Application Audio, Series Regulator and General Purpose External Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Conditions Symbol 2SB1659 Unit 2SB1659 Unit 0.2 4.8 0.2 10.2 ICBO VCBO 110 V VC

E (70 ) B Darlington 2SB1648 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561) Application Audio, Series Regulator and General Purpose (Ta=25 C) External Dimensions MT-200 Absolute maximum ratings (Ta=25 C) Electrical Characteristics Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 6.0 0.3 36.4 VCBO 150 V ICBO VCB= 150

E (70 ) B Darlington 2SB1647 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2560) Application Audio, Series Regulator and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Unit Symbol Ratings Unit Conditions 0.2 4.8 0.4 15.6 VCBO 150 V VCB= 15

E (70 ) B Darlington 2SB1649 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561) Application Audio, Series Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Conditions Ratings Symbol Ratings Unit Unit 0.2 0.2 5.5 15.6 ICBO VCBO 150 V VCB

SMD Type Transistors PNP Transistors 2SB1643 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 High collector to emitter VCEO High collector power dissipation PC 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

SMD Type Transistors PNP Transistors 2SB1667 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low saturation voltage Audio Frequency Power Amplifier Applications 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Uni

SMD Type Transistors PNP Transistors 2SB1628 1.70 0.1 Features High current capacitance Low collector saturation voltage 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -16 V Emitter - Base Voltage VEBO -6 Collector Current - C

2SB1658(3CA1658) PNP /SILICON PNP TRANSISTOR Purpose Audio frequency power amplifier and switching applications. Features Low saturation voltage, high DC current gain. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit

isc Silicon PNP Power Transistor 2SB1605 DESCRIPTION High-speed Switching Low Collector to Emitter Saturation Voltage V = -1.2V(Max.)@I = -3A CE(sat) C Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-freauen

isc Silicon PNP Power Transistor 2SB1604 DESCRIPTION High-speed Switching Low Collector to Emitter Saturation Voltage V = -0.6V(Max.)@I = -10A CE(sat) C Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-voltag

isc Silicon PNP Power Transistor 2SB1658 DESCRIPTION High Collector Current -I = -5A C High DC Current Gain- h = 150 600@I = -1A FE C Low-Collector Saturation Voltage- V = -0.15V(Max.)@I = -1A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency amplifier and switching applications. AB

isc Silicon PNP Power Transistor 2SB1640 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Low Collector to Emitter Saturation Voltage V = -1.5V(Max.)@I = -2A CE(sat) C Complement to Type 2SD2525 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and gene

isc Silicon PNP Darlington Power Transistor 2SB1625 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -110V(Min) (BR)CEO Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -5A CE(sat) C Complement to Type 2SD2494 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio,series regulator and general pur

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB1624 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -110V(Min) (BR)CEO Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -5A CE(sat) C Complement to Type 2SD2493 Minimum Lot-to-Lot variations for robust device performance and reliable operatio APPLICATIONS Designed for audio,series re

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1605 2SB1605A DESCRIPTION With TO-220F package Low collector saturation voltage Good linearity of hFE APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25

isc Silicon PNP Power Transistor 2SB1657 DESCRIPTION High Collector Current -I = -5A C High DC Current Gain- h = 150 600@I = -1A FE C Low-Collector Saturation Voltage- V = -0.15V(Max.)@I = -0.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency amplifier and switching applications.

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB1626 DESCRIPTION High DC Current Gain Low-Collector Saturation Voltage Complement to Type 2SD2495 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio,series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM

isc Silicon PNP Power Transistor 2SB1642 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Collector Power Dissipation- P = 25 W@ T = 25 C C Low Collector Saturation Voltage- V = -1.5V(Max)@ (I = -2.5A, I = -0.25A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio f

isc Silicon PNP Power Transistor 2SB1669 DESCRIPTION High DC current amplifier rate h 100@VCE=-5V,IC=-0.5A FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SB1669-Z is a power transistor that can be directly driven from the output of an IC.This transistor is ideal for OA and FA equipment such as motor and solenoid drivers

isc Silicon PNP Darlington Power Transistor 2SB1647 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = -10A, V = -4V) FE C CE Low Collector Saturation Voltage- V = -2.5V(Max)@ (I = -10A, I = -10mA) CE(sat) C B Complement to Type 2SD2560 Minimum Lot-to-Lot variations for robust device performance and re

isc Silicon PNP Darlington Power Transistor 2SB1649 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -10A CE(sat) C Complement to Type 2SD2561 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio,series regulator and general pu

isc Silicon PNP Power Transistor 2SB1655 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Low Collector Saturation Voltage- V = -1.0V(Max)@ (I = -2A, I = -0.2A) CE(sat) C B Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifications. ABSOLUTE MAXIMUM

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1603 2SB1603A DESCRIPTION With TO-220F package Low collector saturation voltage High speed switching APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 )

isc Silicon PNP Power Transistor 2SB1669-Z DESCRIPTION High DC current amplifier rate h 100@VCE=-5V,IC=-0.5A FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SB1669-Z is a power transistor that can be directly driven from the output of an IC.This transistor is ideal for OA and FA equipment such as

isc Silicon PNP Power Transistor 2SB1607 DESCRIPTION Large Collector Current Satisfactory Linearity of Foward Current Transfer Ratio Low Collector to Emitter Saturation Voltage V = -0.5V(Max.)@I = -5A CE(sat) C Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw Complement to Type 2SD2469 Minimum Lot-to-Lot variations for

isc Silicon PNP Power Transistor 2SB1606 DESCRIPTION High Collector current Ic Low Collector to Emitter Saturation Voltage V = -0.5V(Max.)@I = -4A CE(sat) C Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power

isc Silicon PNP Power Transistor 2SB1603 DESCRIPTION High-speed Switching Low Collector to Emitter Saturation Voltage V = -0.5V(Max.)@I = -2A CE(sat) C Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-voltage

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1604 2SB1604A DESCRIPTION With TO-220F package Low collector saturation voltage High speed switching APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 )