2SB1612 Datasheet and Replacement

Transistor2SB1612Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SD24741.5 0.14.5 0.1Features1.6 0.2Low collector to emitter saturation voltage VCE(sat).Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga- 45zine packing.0.4 0.080.4 0.040.5

Transistor2SB1612Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SD24741.5 0.14.5 0.1Features1.6 0.2Low collector to emitter saturation voltage VCE(sat).Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga- 45zine packing.0.4 0.080.4 0.040.5

SMD Type TransistorsPNP Transistors2SB1612SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-10V Complementary to 2SD24740.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -10 Collector - Emitter Voltage VCEO

2SB1616TransistorsTransistors2SD2478(SPEC-B426)(94L-1129-D426)301

2SB1682 TOSHIBA Transistor Silicon PNP Triple Diffused Type (Darlington power transistor) 2SB1682 Unit: mm Power Amplifier Applications High-Power Switching Applications High-breakdown voltage: VCEO = -160 V (min) Complementary to 2SD2636 Maximum Ratings (Tc = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO -160 VCollector-emitter voltag

Ordering number : ENN69602SB1683 / 2SD26392SB1683 : PNP Epitaxial Planar Silicon Transistor2SD2639 : NPN Triple Diffused Planar Silicon Transistor2SB1683 / 2SD2639140V / 12A, AF 60W Output ApplicationsFeaturesPackage Dimensions Wide ASO because of on-chip ballast resistance.unit : mm Good dependence of fT on current and good HF2010Ccharacteristic.[2SB1683 / 2SD26

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

2SB1691 Silicon PNP Epitaxial Planer Low Frequency Power Amplifier REJ03G0482-0200 (Previous ADE-208-1387A (Z)) Rev.2.00 Dec.09.2004 Features Small size package: MPAK (SC59A) Large Maximum current: IC = 1 A Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A) High power dissipation: PC = 800 mW (when usi

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet 2SB1691 R07DS0272EJ0300(Previous: REJ03G0482-0200)Silicon PNP Epitaxial Planer Rev.3.00Low Frequency Power Amplifier Mar 28, 2011Features Small size package: MPAK (SC59A) Large Maximum current: IC = 1 A Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A) High power dissipation:

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEETSILICON TRANSISTOR2SB1658AUDIO FREQUENCY AMPLIFIER, SWITCHINGPNP SILICON EPITAXIAL TRANSISTORSFEATURESPACKAGE DIMENSIONS Low VCE(sat)in millimeters (inches)VCE(sat) = -0.15 V Max (@lC/lB = 1.0 A/50 mA) High DC Current Gain8.5 MAX. 2.8 MAX.(0.334 MAX.) (0.110 MAX.)hEF = 150 to 600 (@VCE = -2.0 V, lC = -1.0 A) 3.2 0.2 ( 0.126)ABSOLUTE MAXIMUM R

DATA SHEETSILICON TRANSISTOR2SB1657AUDIO FREQUENCY AMPLIFIER, SWITCHINGPNP SILICON EPITAXIAL TRANSISTORSFEATURESPACKAGE DIMENSIONS Low VCE(sat)in millimeters (inches)VCE(sat) = -0.15 V Max (@lC/lB = 0.5 A/25 mA) High DC Current Gain8.5 MAX. 2.8 MAX.(0.334 MAX.) (0.110 MAX.)hFE = 150 to 600 (@VCE = -2.0 V, lC = -0.5 A) 3.2 0.2 ( 0.126)ABSOLUTE MAXIMUM R

DATA SHEETSILICON POWER TRANSISTOR2SB1669PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SB1669 is a power transistor that can be directly driven from ORDERING INFORMATIONthe output of an IC. This transistor is ideal for OA and FA equipmentPart No. Packagesuch as motor and solenoid drivers.2SB1669 TO-220AB2SB1669-S TO-262FEATURES2SB1669-Z TO-220SMD High

DATA SHEETSILICON TRANSISTOR2SB1628PNP SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHINGThe 2SB1628 features high current capacity in small dimension PACKAGE DRAWING (UNIT: mm)and is ideal for DC/DC converters and mortor drivers.FEATURES High current capacitance Low collector saturation voltageQUALITY GRADES StandardPlease re

2SB1690 Transistors General purpose amplification(-12V, -2A) 2SB1690 Applications External dimensions (Unit : mm) Low frequency amplifier TSMT3Deiver 1.0MAX2.90.850.4 0.7 Features (3)1) A collector current is large. 2) Collector saturation voltage is low. (1) (2)VCE(sat) : max. -180mV 0.95 0.950.161.9at IC= -1A / IB= -50mA (1) Base (2) EmitterEa

2SB1695KDatasheetDatasheetGeneral purpose amplification(-30V,-1.5A)lOutlinel SOT-346 Parameter Value SC-59 VCEO-30VIC-1.5ASMT3lFeatures lInner circuitl l1) Collector current is large.2) VCE(sat)-370mVat IC= -1A / IB= -50mA3) Complementary NPN Types : 2SD2657KlApplicationlLOW FREQUENCY AMPLIFIER, DRIVER

2SB1676TransistorsMedium Power Transistor(Motor, Relay drive) (-80V, -4A)2SB1676 External dimensions (Units : mm) Features1) Darlington connection for a high hFE.2) Built-in resistor between base and emitter.10.0 4.53) Built-in damper diode.3.2 2.8 4) Complements the 2SD2618.1.21.30.8 Absolute maximum ratings (Ta = 25C)0.752.54 2.54 2.6 (1) Base(Gate)

2SB1694DatasheetGeneral purpose amplification (-30V, -1A)lOutlinel SOT-323 Parameter Value SC-70 VCEO-30VIC-1AUMT3lFeatures lInner circuitl l1)A collector current is large2)Collector-Emitter saturation voltage is low.VCE(sat)-380mVat IC=-500mA/IB=-25mA3)Complements the 2SD2656.lApplicationlLOW FREQUENC

2SB1674TransistorsPower Transistor (-120V, -6A)2SB1674 External dimensions (Units : mm) Features1) Darlington connection for high DC current gain.2) Built-in resistor between base and emitter.10.0 4.53) Built-in damper diode.3.2 2.8 4) Complements the 2SD2615.1.21.30.8 Absolute maximum ratings (Ta=25C)0.75 ( )2.54 2.54 2.6 (1) Base Gate(1) (2) (3)( )

2SB1695 Transistors Low frequency amplifier 2SB1695 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3Driver 1.0MAX2.90.850.4 0.7(3) Features 1) A collector current is large. 2) VCE(sat) -370mV ( ) ( )1 20.95 0.95at IC =-1A / IB =-50mA 0.161.9(1) Base(2) EmitterEach lead has same dimensions(3) Collector Packaging spec

2SB1672TransistorsPower Transistor (-80V, -7A)2SB1672 External dimensions (Units : mm) Features1) Low saturation voltage.(Typ. VCE(sat) = -0.3V at IC / IB =-4A / -0.4A)10.0 4.53.2 2.8 2) Excellent DC current gain characteristics.3) Pc = 30W (Tc = 25C).4) Wide SOA (safe operating area).1.21.35) Complements the 2SD2611.0.80.752.54 2.54 2.6(1) (2) (3)(

2SB1695KFRA AEC-Q101 Qualified 2SB1695KFRA

2SB16942SB1694FRADatasheet PNP -1A -30V Low Frequency Amplifier TransistorsAEC-Q101 QualifiedlOutlineUMT3Parameter ValueCollectorVCEO-30VBaseIC-1AEmitter2SB1694FRA2SB1694SOT-323 (SC-70)lFeatures1) A Collecotr current is large.General Purpose.2) Collector saturation voltage is low.VCE(sat) is Max. -380mVAt IC= -500mA, IB= -25mA3) Complementary NPN Ty

2SB1644TransistorsPower Transistor (-80V, -4A)2SB1644 Features External dimensions (Units : mm)1) Low saturation voltage.13.13.2(Typ. VCE(sat) = -0.5V at IC / IB = -3A / -0.3A)2) Excellent DC current gain characteristics.8.8 Absolute maximum ratings (Ta = 25C)Parameter Symbol Limits UnitCollector-base voltageVCBO -80 VCollector-emitter voltageVCEO -80 V0.5Min

2SB1644JFRA2SB1644JDatasheetPNP -4A -80V Power TransistorAEC-Q101 QualifiedOutline LPT(S) (D2-PAK)Parameter ValueCollectorVCEO80VIC4ABaseEmitter2SB1644J2SB1644JFRAFeatures(SC-83)1) Suitable for Power Driver2) Low VCE(sat)VCE(sat)= 1.5V(Max.) (IC/IB= 3A/ 300mA)3) Lead Free/RoHS Compliant.Inner circuitCollectorApplicatio

2SB1675TransistorsPower Transistor (-80V, -10A)2SB1675 Features External dimensions (Units : mm)1) Darlington connection for high DC current gain.2) Built-in resistor between base and emitter.10.0 4.53) Built-in damper diode.3.2 2.8 1.21.3 Absolute maximum retings (Ta=25C)0.8Parameter Symbol Limits Unit0.752.54 2.54 2.6Collector-base voltage VCBO -80 V(

2SB1697 Transistors Low Frequency Amplifier (-12V, -2A) 2SB1697 External dimensions (Unit : mm) Features Low VCE(sat) 4.0VCE(sat) -180mV 1.0 2.5 0.5(IC /IB=-1A/-50mA) (1)(2) (3)Each lead has same dimensionsAbbreviated symbol: FVROHM : MPT3 (1)BaseJEITA : SC-62(2)CollectorJEDEC: SOT-89(3)Emitter Packaging specifications Absolute maximum ratings

2SB1644JDatasheetPNP -4A -80V Power TransistorOutline LPT(S) (D2-PAK)Parameter ValueCollectorVCEO80VIC4ABaseEmitter2SB1644JFeatures(SC-83)1) Suitable for Power Driver2) Low VCE(sat)VCE(sat)= 1.5V(Max.) (IC/IB= 3A/ 300mA)3) Lead Free/RoHS Compliant.Inner circuitCollectorApplicationsAutomotive power driver , LED driver Bas

2SB1689DatasheetGeneral purpose amplification (-12V, -1.5A)lOutlinel SOT-323 Parameter Value SC-70 VCEO-12VIC-1.5AUMT3lFeatures lInner circuitl l1)A collector current is large2)Collector saturation voltage is low.VCE(sat)-200mVat IC=-500mA/IB=-25mAlApplicationlLOW FREQUENCY AMPLIFIER, DRIVERlPackaging

2SB1698 Transistors Low frequency amplifier 2SB1698 Dimensions (Unit : mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) -370mV at IC =-1A / IB =-50mA Each lead has same dimensionsROHM : MPT3 (1)Base JEITA : SC-62(2)Collector JEDEC: SOT-89(3)Emitter Abbreviated symbol: FL Packaging specifications

2SB1668TransistorsPower Transistor (-100V, -8A)2SB1668 External dimensions (Units : mm) Features1) Darlington connection for high DC current gain.10.0 4.52) Built-in resistor between base and emitter.3.2 2.8 3) Built-in damper diode.4) Complements the 2SD2607.1.21.30.8( )(1) Base Gate0.752.54 2.54 2.6 Absolute maximum ratings (Ta = 25C)(1) (2) (3)

2SB1690K Transistors General purpose amplification(-12V, -2A) 2SB1690K External dimensions (Units : mm) Applications Low frequency amplifier Deiver Features 1.61) A collector current is large. 2.82) Collector saturation voltage is low. VCE(sat) -180mV 0.3Min.at IC= -1A / IB= -50mA Each lead has same dimensions(1) EmitterROHM : SMT3EIAJ : SC-59 (2) Ba

Power Transistors2SB1605, 2SB1605ASilicon PNP epitaxial planar typeFor low-freauency power amplificationUnit: mmFeatures High forward current transfer ratio hFE which has satisfactory linearity4.6 0.2 Low collector to emitter saturation voltage VCE(sat)9.9 0.3 2.9 0.2 Full-pack package with outstanding insulation, which can be in- 3.2 0.1stalled to the heat sin

Transistors2SB1679Silicon PNP epitaxial planer typeUnit: mmFor low-frequency amplification0.3+0.1 0.15+0.100.050.03 Features Large current capacitance Low collector to emitter saturation voltage1 2 Small type package, allowing downsizing and thinning of the(0.65) (0.65)equipment.1.30.12.00.210 Absolute Maximum Ratings Ta = 25CParame

Power Transistors2SB1604, 2SB1604ASilicon PNP epitaxial planar typeFor low-voltage switchingUnit: mmFeatures4.6 0.2Low collector to emitter saturation voltage VCE(sat)9.9 0.3 2.9 0.2 3.2 0.1High-speed switchingFull-pack package with outstanding insulation, which can be in-stalled to the heat sink with one screwAbsolute Maximum Ratings (TC=25C)2.6 0.11

Power Transistors2SB1623Silicon PNP epitaxial planar typeFor power amplificationUnit: mm4.60.29.90.32.90.2 Features 3.20.1 High forward current transfer ratio hFE Satisfactory linearity of forward current transfer ratio hFE Dielectric breakdown voltage of the package: > 5 kV1.40.22.60.11.60.2 Absolute Maximum Ratings Ta = 25C0.8

Transistors2SB1678Silicon PNP epitaxial planer typeUnit: mmFor low-frequency amplification4.50.11.60.2 1.50.1 Features Low collector to emitter saturation voltage VCE(sat) Large Peak collector current ICP3 21 Mini power type package, allowing downsizing and thinning of the0.40.08 0.50.08 0.40.04equipment and automatic insertion through the tape pac

Power Transistors2SB1643Silicon PNP epitaxial planar typeUnit: mm8.5 0.2 3.4 0.3For power amplification6.0 0.5 1.0 0.1Features1.5max. 1.1max.High collector to emitter VCEOHigh collector power dissipation PC0.8 0.1 0.5max.N type package enabling direct soldering of the radiating fin to2.54 0.3the printed circuit board, etc. of small electronic equipment.

Power Transistors2SB1645Silicon PNP triple diffusion planar type DarlingtonUnit: mmFor power amplification15.50.5 3.00.3 3.20.155 Features Satisfactory forward current transfer ratio hFE characteristics Wide area of safe operation (ASO)55 Optimum for the output stage of a HiFi audio amplifier(4.0)52.00.21.10.1 Absolute Maximum

Power Transistors2SB1623ASilicon PNP epitaxial planar typeFor power amplificationUnit: mm4.60.29.90.32.90.2 Features 3.20.1 High forward current transfer ratio hFE Satisfactory linearity of forward current transfer ratio hFE Dielectric breakdown voltage of the package: > 5 kV Absolute Maximum Ratings Ta = 25C1.40.22.60.11.60.2Pa

Power Transistors2SB1653Silicon PNP triple diffusion planar typeFor power switchingUnit: mm7.5 0.2 4.5 0.2Features90High collector to emitter VCEO0.65 0.1 0.85 0.1Low collector to emitter saturation voltage VCE(sat)Allowing automatic insertion with radial taping1.0 0.10.8C 0.8C0.7 0.1 0.7 0.1Absolute Maximum Ratings (TC=25C)Parameter Symbol Rati

Transistors2SB1693Silicon PNP epitaxial planar typeFor general amplificationUnit: mm0.40+0.100.050.16+0.100.06 Features3 Large collector current IC Mini type package, allowing downsizing of the equipment and auto-matic insertion through the tape packing and the magazine packing1 2(0.95) (0.95)1.90.12.90+0.200.05 Absolute Maximum Ratin

Power Transistors2SB1638, 2SB1638ASilicon PNP epitaxial planar typeUnit: mm7.0 0.3 3.5 0.2For low-voltage switching3.0 0.2Features Low collector to emitter saturation voltage VCE(sat)1.1 0.1 0.85 0.1 Satisfactory linearity of foward current transfer ratio hFE0.75 0.1 0.4 0.1 I type package enabling direct soldering of the radiating fin tothe printed circu

Transistor2SB1651Silicon PNP epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mm6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesLow noise voltage NV.High foward current transfer ratio hFE.M type package allowing easy automatic and manual insertion as0.65 max.well as stand-alone fixing to the printed circuit board.+0.1 0.450.05A

Power Transistors2SB1631Silicon PNP epitaxial planar typeFor power amplificationUnit: mm10.00.2 5.00.11.00.2 Features High forward current transfer ratio hFE which has satisfactorylinearity Low collector-emitter saturation voltage VCE(sat)1.20.1 Allowing automatic insertion with radial tapingC 1.01.480.22.250.20.650.10.650.1 Abs

Power Transistors2SB1629Silicon PNP epitaxial planar typeFor power amplificationUnit: mm4.6 0.29.9 0.3 2.9 0.2Features 3.2 0.1High foward current transfer ratio hFESatisfactory linearity of foward current transfer ratio hFEFull-pack package with outstanding insulation, which can be in-stalled to the heat sink with one screw2.6 0.11.2 0.151.45 0.15

Transistors2SB1699Silicon PNP epitaxial planar typeUnit: mmFor power amplification4.50.11.60.2 1.50.1 Features Low collector-emitter saturation voltage VCE(sat) Mini Power type package, allowing downsizing of the equipment1 23and automatic insertion through the tape packing and the maga-0.40.08 0.50.08 0.40.04zine packing. 1.50.13 Absolu

Power Transistors2SB1607Silicon PNP epitaxial planar typeFor power switchingUnit: mmComplementary to 2SD24694.6 0.29.9 0.3 2.9 0.2Features 3.2 0.1Low collector to emitter saturation voltage VCE(sat)Satisfactory linearity of foward current transfer ratio hFELarge collector current ICFull-pack package with outstanding insulation, which can be in-2.6 0.1s

Power Transistors2SB1606Silicon PNP epitaxial planar typeFor power switchingUnit: mm4.6 0.29.9 0.3 2.9 0.2Features 3.2 0.1Low collector to emitter saturation voltage VCE(sat)Satisfactory linearity of foward current transfer ratio hFELarge collector current ICFull-pack package with outstanding insulation, which can be in-2.6 0.1stalled to the heat sink wi

Power Transistors2SB1603, 2SB1603ASilicon PNP epitaxial planar typeFor low-voltage switchingUnit: mm4.6 0.2Features9.9 0.3 2.9 0.2Low collector to emitter saturation voltage VCE(sat) 3.2 0.1High-speed switchingFull-pack package with outstanding insulation, which can be in-stalled to the heat sink with one screwAbsolute Maximum Ratings (TC=25C) 2.6 0.11.

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1658 DESCRIPTION With TO-126 package Low collector saturation voltage High DC current gain APPLICATIONS For audio frequency amplifier and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMB

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1657 DESCRIPTION With TO-126 package Low collector saturation voltage High DC current gain APPLICATIONS For audio frequency amplifier and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMB

JMnic Product Specification Silicon PNP Power Transistors 2SB1658 DESCRIPTION With TO-126 package Low collector saturation voltage High DC current gain APPLICATIONS For audio frequency amplifier and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER

JMnic Product Specification Silicon PNP Power Transistors 2SB1640 DESCRIPTION With ITO-220 package Low collector saturation voltage Complement to type 2SD2525 APPLICATIONS Audio frequency power amplifier PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITI

JMnic Product SpecificationSilicon PNP Darlington Power Transistors 2SB1625 DESCRIPTION With TO-3PML package Complement to type 2SD2494 APPLICATIONS Audio ,regulator and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterMaximum absolute ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO

JMnic Product Specification Silicon PNP Power Transistors 2SB1657 DESCRIPTION With TO-126 package Low collector saturation voltage High DC current gain APPLICATIONS For audio frequency amplifier and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER

JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1626 DESCRIPTION With TO-220F package Complement to type 2SD2495 APPLICATIONS For audio,series regulator and general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CON

JMnic Product Specification Silicon PNP Power Transistors 2SB1642 DESCRIPTION With TO-220F package Low collector saturation voltage: VCE(SAT)=-1.5V(Max) at IC=-2.5A,IB=-0.25A Collector power dissipation: PC=25W(TC=25) APPLICATIONS Audio frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-220F) and

JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1647 DESCRIPTION With TO-3PN package Complement to type 2SD2560 APPLICATIONS Audio ,regulator and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER

JMnic Product Specification Silicon PNP Power Transistors 2SB1655 DESCRIPTION With TO-220F package Excellent DC current gain characteristics Low collector saturation voltage Wide area of safe operation Complement to type 2SD2394 PINNING PIN DESCRIPTION1 Base 2 Collector3 Emitter Fig.1 simplified outline (TO-220F) and symbolAbsolute maximum ratings (Ta=25)

JMnic Product Specification Silicon PNP Power Transistors 2SB1604 2SB1604A DESCRIPTION With TO-220F package Low collector saturation voltage High speed switching APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbolAbsolute maximum ratings (Ta=25) SYMBOL PARAMET

E(70)BDarlington 2SB1625Equivalent circuitCSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2494)Application : Audio, Series Regulator and General PurposeExternal Dimensions FM100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SB1625 Symbol Conditions 2SB1625 UnitUnit0.20.2 5.515.6VCBO 110 ICBO VCB=

E(70)BDarlington 2SB1624Equivalent circuitCSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2493)Application : Audio, Series Regulator and General Purpose(Ta=25C) External Dimensions MT-100(TO3P) Absolute maximum ratings Electrical Characteristics (Ta=25C)Symbol 2SB1624 Symbol Conditions 2SB1624Unit Unit0.24.80.415.6VCBO 110 ICBO VCB=

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E(70)BDarlington 2SB1659Equivalent circuitCSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2589)Application : Audio, Series Regulator and General PurposeExternal Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol ConditionsSymbol 2SB1659 Unit 2SB1659 Unit0.24.80.210.2ICBOVCBO 110 V VC

E(70)BDarlington 2SB1648Equivalent circuitCSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561)Application : Audio, Series Regulator and General Purpose(Ta=25C) External Dimensions MT-200 Absolute maximum ratings (Ta=25C) Electrical CharacteristicsSymbol Ratings Unit Symbol Conditions Ratings Unit0.26.00.336.4VCBO 150 V ICBO VCB=150

E(70)BDarlington 2SB1626Equivalent circuit CSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2495)Application : Audio, Series Regulator and General PurposeExternal Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SB1626 Symbol Conditions 2SB1626 UnitUnit0.24.20.210.1VCBO 110 ICBO VCB=

E(70)BDarlington 2SB1647Equivalent circuit CSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2560)Application : Audio, Series Regulator and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Ratings UnitConditions0.24.80.415.6VCBO 150 V VCB=15

E(70)BDarlington 2SB1649Equivalent circuitCSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561)Application : Audio, Series Regulator and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Conditions RatingsSymbol Ratings Unit Unit0.20.2 5.515.6ICBOVCBO 150 V VCB

SMD Type TransistorsPNP Transistors2SB1643TO-252Unit: mm+0.156.50-0.15+0.1 Features2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 High collector to emitter VCEO High collector power dissipation PC0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

SMD Type TransistorsPNP Transistors2SB1667TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low saturation voltage Audio Frequency Power Amplifier Applications0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Uni

SMD Type TransistorsPNP Transistors2SB16281.70 0.1 Features High current capacitance Low collector saturation voltage0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -16 V Emitter - Base Voltage VEBO -6 Collector Current - C

2SB1658(3CA1658) PNP /SILICON PNP TRANSISTOR : Purpose: Audio frequency power amplifier and switching applications. : Features: Low saturation voltage, high DC current gain. /Absolute maximum ratings(Ta=25) Symbol Rating Unit

isc Silicon PNP Power Transistor 2SB1605DESCRIPTIONHigh-speed SwitchingLow Collector to Emitter Saturation Voltage: V = -1.2V(Max.)@I = -3ACE(sat) CFull-pack Package With Outstanding Insulation,Which Can Be Installed to The Heat Sink With One ScrewMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-freauen

isc Silicon PNP Power Transistor 2SB1604DESCRIPTIONHigh-speed SwitchingLow Collector to Emitter Saturation Voltage: V = -0.6V(Max.)@I = -10ACE(sat) CFull-pack Package With Outstanding Insulation,Which Can Be Installed to The Heat Sink With One ScrewMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-voltag

isc Silicon PNP Power Transistor 2SB1658DESCRIPTIONHigh Collector Current -I = -5ACHigh DC Current Gain-: h = 150~600@I = -1AFE CLow-Collector Saturation Voltage-: V = -0.15V(Max.)@I = -1ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency amplifier and switchingapplications.AB

isc Silicon PNP Power Transistor 2SB1640DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOLow Collector to Emitter Saturation Voltage: V = -1.5V(Max.)@I = -2ACE(sat) CComplement to Type 2SD2525Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and gene

isc Silicon PNP Darlington Power Transistor 2SB1625DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -110V(Min)(BR)CEOLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -5ACE(sat) CComplement to Type 2SD2494Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio,series regulator and general pur

INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor 2SB1624DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -110V(Min)(BR)CEOLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -5ACE(sat) CComplement to Type 2SD2493Minimum Lot-to-Lot variations for robust deviceperformance and reliable operatioAPPLICATIONSDesigned for audio,series re

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1605 2SB1605A DESCRIPTION With TO-220F package Low collector saturation voltage Good linearity of hFE APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbolAbsolute maximum ratings (Ta=25

isc Silicon PNP Power Transistor 2SB1657DESCRIPTIONHigh Collector Current -I = -5ACHigh DC Current Gain-: h = 150~600@I = -1AFE CLow-Collector Saturation Voltage-: V = -0.15V(Max.)@I = -0.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency amplifier and switchingapplications.

INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor 2SB1626DESCRIPTIONHigh DC Current GainLow-Collector Saturation VoltageComplement to Type 2SD2495Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio,series regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM

isc Silicon PNP Power Transistor 2SB1642DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOCollector Power Dissipation-: P = 25 W@ T = 25C CLow Collector Saturation Voltage-: V = -1.5V(Max)@ (I = -2.5A, I = -0.25A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio f

isc Silicon PNP Power Transistor 2SB1669DESCRIPTIONHigh DC current amplifier rateh 100@VCE=-5V,IC=-0.5AFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SB1669-Z is a power transistor that can be directly drivenfrom the output of an IC.This transistor is ideal for OA and FAequipment such as motor and solenoid drivers

isc Silicon PNP Darlington Power Transistor 2SB1647DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = -10A, V = -4V)FE C CELow Collector Saturation Voltage-: V = -2.5V(Max)@ (I = -10A, I = -10mA)CE(sat) C BComplement to Type 2SD2560Minimum Lot-to-Lot variations for robust deviceperformance and re

isc Silicon PNP Darlington Power Transistor 2SB1649DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -150V(Min)(BR)CEOLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -10ACE(sat) CComplement to Type 2SD2561Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio,series regulator and general pu

isc Silicon PNP Power Transistor 2SB1655DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -1.0V(Max)@ (I = -2A, I = -0.2A)CE(sat) C BWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifications.ABSOLUTE MAXIMUM

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1603 2SB1603A DESCRIPTION With TO-220F package Low collector saturation voltage High speed switching APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbolAbsolute maximum ratings (Ta=25)

isc Silicon PNP Power Transistor 2SB1669-ZDESCRIPTIONHigh DC current amplifier rateh 100@VCE=-5V,IC=-0.5AFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SB1669-Z is a power transistor that can be directly drivenfrom the output of an IC.This transistor is ideal for OA and FAequipment such as

isc Silicon PNP Power Transistor 2SB1607DESCRIPTIONLarge Collector CurrentSatisfactory Linearity of Foward Current Transfer RatioLow Collector to Emitter Saturation Voltage: V = -0.5V(Max.)@I = -5ACE(sat) CFull-pack Package With Outstanding Insulation,Which Can Be Installed to The Heat Sink With One ScrewComplement to Type 2SD2469Minimum Lot-to-Lot variations for

isc Silicon PNP Power Transistor 2SB1606DESCRIPTIONHigh Collector current IcLow Collector to Emitter Saturation Voltage: V = -0.5V(Max.)@I = -4ACE(sat) CFull-pack Package With Outstanding Insulation,Which Can Be Installed to The Heat Sink With One ScrewMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power

isc Silicon PNP Power Transistor 2SB1603DESCRIPTIONHigh-speed SwitchingLow Collector to Emitter Saturation Voltage: V = -0.5V(Max.)@I = -2ACE(sat) CFull-pack Package With Outstanding Insulation,Which Can Be Installed to The Heat Sink With One ScrewMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-voltage

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1604 2SB1604A DESCRIPTION With TO-220F package Low collector saturation voltage High speed switching APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbolAbsolute maximum ratings (Ta=25)