2SB1679 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB1679  📄📄 

Código: 3V

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 15 V

Tensión colector-emisor (Vce): 10 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 130 MHz

Capacitancia de salida (Cc): 22 pF

Ganancia de corriente contínua (hFE): 130

Encapsulados: SC-70

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2SB1679 datasheet

 ..1. Size:44K  panasonic
 2sb1679.pdf pdf_icon

2SB1679

Transistors 2SB1679 Silicon PNP epitaxial planer type Unit mm For low-frequency amplification 0.3+0.1 0.15+0.10 0.05 0.0 3 Features Large current capacitance Low collector to emitter saturation voltage 1 2 Small type package, allowing downsizing and thinning of the (0.65) (0.65) equipment. 1.3 0.1 2.0 0.2 10 Absolute Maximum Ratings Ta = 25 C Parame

 8.1. Size:53K  rohm
 2sb1676.pdf pdf_icon

2SB1679

2SB1676 Transistors Medium Power Transistor (Motor, Relay drive) (-80V, -4A) 2SB1676 External dimensions (Units mm) Features 1) Darlington connection for a high hFE. 2) Built-in resistor between base and emitter. 10.0 4.5 3) Built-in damper diode. 3.2 2.8 4) Complements the 2SD2618. 1.2 1.3 0.8 Absolute maximum ratings (Ta = 25 C) 0.75 2.54 2.54 2.6 (1) Base(Gate)

 8.2. Size:52K  rohm
 2sb1674.pdf pdf_icon

2SB1679

2SB1674 Transistors Power Transistor (-120V, -6A) 2SB1674 External dimensions (Units mm) Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 10.0 4.5 3) Built-in damper diode. 3.2 2.8 4) Complements the 2SD2615. 1.2 1.3 0.8 Absolute maximum ratings (Ta=25 C) 0.75 ( ) 2.54 2.54 2.6 (1) Base Gate (1) (2) (3) ( )

 8.3. Size:52K  rohm
 2sb1672.pdf pdf_icon

2SB1679

2SB1672 Transistors Power Transistor (-80V, -7A) 2SB1672 External dimensions (Units mm) Features 1) Low saturation voltage. (Typ. VCE(sat) = -0.3V at IC / IB =-4A / -0.4A) 10.0 4.5 3.2 2.8 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25 C). 4) Wide SOA (safe operating area). 1.2 1.3 5) Complements the 2SD2611. 0.8 0.75 2.54 2.54 2.6 (1) (2) (3) (

MOSTRAR MÁS

Otros transistores... 2SB1631, 2SB1638, 2SB1638A, 2SB1643, 2SB1645, 2SB1653, 2SB1667, 2SB1678, BD139, 2SB1688, 2SB1693, 2SB1699, 2SB1713, FJAF6810A_J6810A, 2SC5936, 2SC5248, 2SC5615