Биполярный транзистор 2SB1679
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB1679
Маркировка: 3V
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.15
W
Макcимально допустимое напряжение коллектор-база (Ucb): 15
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 10
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7
V
Макcимальный постоянный ток коллектора (Ic): 0.5
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 130
MHz
Ёмкость коллекторного перехода (Cc): 22
pf
Статический коэффициент передачи тока (hfe): 130
Корпус транзистора:
SC-70
Аналоги (замена) для 2SB1679
2SB1679
Datasheet (PDF)
..1. Size:44K panasonic
2sb1679.pdf 
Transistors2SB1679Silicon PNP epitaxial planer typeUnit: mmFor low-frequency amplification0.3+0.1 0.15+0.100.050.03 Features Large current capacitance Low collector to emitter saturation voltage1 2 Small type package, allowing downsizing and thinning of the(0.65) (0.65)equipment.1.30.12.00.210 Absolute Maximum Ratings Ta = 25CParame
8.1. Size:53K rohm
2sb1676.pdf 
2SB1676TransistorsMedium Power Transistor(Motor, Relay drive) (-80V, -4A)2SB1676 External dimensions (Units : mm) Features1) Darlington connection for a high hFE.2) Built-in resistor between base and emitter.10.0 4.53) Built-in damper diode.3.2 2.8 4) Complements the 2SD2618.1.21.30.8 Absolute maximum ratings (Ta = 25C)0.752.54 2.54 2.6 (1) Base(Gate)
8.2. Size:52K rohm
2sb1674.pdf 
2SB1674TransistorsPower Transistor (-120V, -6A)2SB1674 External dimensions (Units : mm) Features1) Darlington connection for high DC current gain.2) Built-in resistor between base and emitter.10.0 4.53) Built-in damper diode.3.2 2.8 4) Complements the 2SD2615.1.21.30.8 Absolute maximum ratings (Ta=25C)0.75 ( )2.54 2.54 2.6 (1) Base Gate(1) (2) (3)( )
8.3. Size:52K rohm
2sb1672.pdf 
2SB1672TransistorsPower Transistor (-80V, -7A)2SB1672 External dimensions (Units : mm) Features1) Low saturation voltage.(Typ. VCE(sat) = -0.3V at IC / IB =-4A / -0.4A)10.0 4.53.2 2.8 2) Excellent DC current gain characteristics.3) Pc = 30W (Tc = 25C).4) Wide SOA (safe operating area).1.21.35) Complements the 2SD2611.0.80.752.54 2.54 2.6(1) (2) (3)(
8.4. Size:52K rohm
2sb1675.pdf 
2SB1675TransistorsPower Transistor (-80V, -10A)2SB1675 Features External dimensions (Units : mm)1) Darlington connection for high DC current gain.2) Built-in resistor between base and emitter.10.0 4.53) Built-in damper diode.3.2 2.8 1.21.3 Absolute maximum retings (Ta=25C)0.8Parameter Symbol Limits Unit0.752.54 2.54 2.6Collector-base voltage VCBO -80 V(
8.5. Size:119K panasonic
2sb1678.pdf 
Transistors2SB1678Silicon PNP epitaxial planer typeUnit: mmFor low-frequency amplification4.50.11.60.2 1.50.1 Features Low collector to emitter saturation voltage VCE(sat) Large Peak collector current ICP3 21 Mini power type package, allowing downsizing and thinning of the0.40.08 0.50.08 0.40.04equipment and automatic insertion through the tape pac
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