2SB1693 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB1693
Código: 3D
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 15 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 170 MHz
Capacitancia de salida (Cc): 16 pF
Ganancia de corriente contínua (hfe): 160
Paquete / Cubierta: SC-59
Búsqueda de reemplazo de transistor bipolar 2SB1693
2SB1693 Datasheet (PDF)
2sb1693.pdf
Transistors 2SB1693 Silicon PNP epitaxial planar type For general amplification Unit mm 0.40+0.10 0.05 0.16+0.10 0.06 Features 3 Large collector current IC Mini type package, allowing downsizing of the equipment and auto- matic insertion through the tape packing and the magazine packing 1 2 (0.95) (0.95) 1.9 0.1 2.90+0.20 0.05 Absolute Maximum Ratin
2sb1691.pdf
2SB1691 Silicon PNP Epitaxial Planer Low Frequency Power Amplifier REJ03G0482-0200 (Previous ADE-208-1387A (Z)) Rev.2.00 Dec.09.2004 Features Small size package MPAK (SC 59A) Large Maximum current IC = 1 A Low collector to emitter saturation voltage VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/ 0.05 A) High power dissipation PC = 800 mW (when usi
r07ds0272ej 2sb1691-1.pdf
Preliminary Datasheet 2SB1691 R07DS0272EJ0300 (Previous REJ03G0482-0200) Silicon PNP Epitaxial Planer Rev.3.00 Low Frequency Power Amplifier Mar 28, 2011 Features Small size package MPAK (SC 59A) Large Maximum current IC = 1 A Low collector to emitter saturation voltage VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/ 0.05 A) High power dissipation
2sb1690.pdf
2SB1690 Transistors General purpose amplification(-12V, -2A) 2SB1690 Applications External dimensions (Unit mm) Low frequency amplifier TSMT3 Deiver 1.0MAX 2.9 0.85 0.4 0.7 Features (3) 1) A collector current is large. 2) Collector saturation voltage is low. (1) (2) VCE(sat) max. -180mV 0.95 0.95 0.16 1.9 at IC= -1A / IB= -50mA (1) Base (2) Emitter Ea
Otros transistores... 2SB1638A , 2SB1643 , 2SB1645 , 2SB1653 , 2SB1667 , 2SB1678 , 2SB1679 , 2SB1688 , 2N2222 , 2SB1699 , 2SB1713 , FJAF6810A_J6810A , 2SC5936 , 2SC5248 , 2SC5615 , 2SC5694 , 2SC6093LS .
Liste
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