2SB1699
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB1699
Código: 3A
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 2
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 180
MHz
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: MINIP3-F1
Búsqueda de reemplazo de transistor bipolar 2SB1699
2SB1699
Datasheet (PDF)
..1. Size:83K panasonic
2sb1699.pdf
Transistors2SB1699Silicon PNP epitaxial planar typeUnit: mmFor power amplification4.50.11.60.2 1.50.1 Features Low collector-emitter saturation voltage VCE(sat) Mini Power type package, allowing downsizing of the equipment1 23and automatic insertion through the tape packing and the maga-0.40.08 0.50.08 0.40.04zine packing. 1.50.13 Absolu
8.1. Size:77K renesas
2sb1691.pdf
2SB1691 Silicon PNP Epitaxial Planer Low Frequency Power Amplifier REJ03G0482-0200 (Previous ADE-208-1387A (Z)) Rev.2.00 Dec.09.2004 Features Small size package: MPAK (SC59A) Large Maximum current: IC = 1 A Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A) High power dissipation: PC = 800 mW (when usi
8.2. Size:88K renesas
r07ds0272ej 2sb1691-1.pdf
Preliminary Datasheet 2SB1691 R07DS0272EJ0300(Previous: REJ03G0482-0200)Silicon PNP Epitaxial Planer Rev.3.00Low Frequency Power Amplifier Mar 28, 2011Features Small size package: MPAK (SC59A) Large Maximum current: IC = 1 A Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A) High power dissipation:
8.3. Size:68K rohm
2sb1690.pdf
2SB1690 Transistors General purpose amplification(-12V, -2A) 2SB1690 Applications External dimensions (Unit : mm) Low frequency amplifier TSMT3Deiver 1.0MAX2.90.850.4 0.7 Features (3)1) A collector current is large. 2) Collector saturation voltage is low. (1) (2)VCE(sat) : max. -180mV 0.95 0.950.161.9at IC= -1A / IB= -50mA (1) Base (2) EmitterEa
8.4. Size:1510K rohm
2sb1695k.pdf
2SB1695KDatasheetDatasheetGeneral purpose amplification(-30V,-1.5A)lOutlinel SOT-346 Parameter Value SC-59 VCEO-30VIC-1.5ASMT3lFeatures lInner circuitl l1) Collector current is large.2) VCE(sat)-370mVat IC= -1A / IB= -50mA3) Complementary NPN Types : 2SD2657KlApplicationlLOW FREQUENCY AMPLIFIER, DRIVER
8.5. Size:921K rohm
2sb1694.pdf
2SB1694DatasheetGeneral purpose amplification (-30V, -1A)lOutlinel SOT-323 Parameter Value SC-70 VCEO-30VIC-1AUMT3lFeatures lInner circuitl l1)A collector current is large2)Collector-Emitter saturation voltage is low.VCE(sat)-380mVat IC=-500mA/IB=-25mA3)Complements the 2SD2656.lApplicationlLOW FREQUENC
8.6. Size:105K rohm
2sb1695.pdf
2SB1695 Transistors Low frequency amplifier 2SB1695 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3Driver 1.0MAX2.90.850.4 0.7(3) Features 1) A collector current is large. 2) VCE(sat) -370mV ( ) ( )1 20.95 0.95at IC =-1A / IB =-50mA 0.161.9(1) Base(2) EmitterEach lead has same dimensions(3) Collector Packaging spec
8.7. Size:942K rohm
2sb1695kfra.pdf
2SB1695KFRA AEC-Q101 Qualified 2SB1695KFRA
8.8. Size:1298K rohm
2sb1694fra.pdf
2SB16942SB1694FRADatasheet PNP -1A -30V Low Frequency Amplifier TransistorsAEC-Q101 QualifiedlOutlineUMT3Parameter ValueCollectorVCEO-30VBaseIC-1AEmitter2SB1694FRA2SB1694SOT-323 (SC-70)lFeatures1) A Collecotr current is large.General Purpose.2) Collector saturation voltage is low.VCE(sat) is Max. -380mVAt IC= -500mA, IB= -25mA3) Complementary NPN Ty
8.9. Size:102K rohm
2sb1697.pdf
2SB1697 Transistors Low Frequency Amplifier (-12V, -2A) 2SB1697 External dimensions (Unit : mm) Features Low VCE(sat) 4.0VCE(sat) -180mV 1.0 2.5 0.5(IC /IB=-1A/-50mA) (1)(2) (3)Each lead has same dimensionsAbbreviated symbol: FVROHM : MPT3 (1)BaseJEITA : SC-62(2)CollectorJEDEC: SOT-89(3)Emitter Packaging specifications Absolute maximum ratings
8.10. Size:117K rohm
2sb1698.pdf
2SB1698 Transistors Low frequency amplifier 2SB1698 Dimensions (Unit : mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) -370mV at IC =-1A / IB =-50mA Each lead has same dimensionsROHM : MPT3 (1)Base JEITA : SC-62(2)Collector JEDEC: SOT-89(3)Emitter Abbreviated symbol: FL Packaging specifications
8.11. Size:66K rohm
2sb1690k.pdf
2SB1690K Transistors General purpose amplification(-12V, -2A) 2SB1690K External dimensions (Units : mm) Applications Low frequency amplifier Deiver Features 1.61) A collector current is large. 2.82) Collector saturation voltage is low. VCE(sat) -180mV 0.3Min.at IC= -1A / IB= -50mA Each lead has same dimensions(1) EmitterROHM : SMT3EIAJ : SC-59 (2) Ba
8.12. Size:82K panasonic
2sb1693.pdf
Transistors2SB1693Silicon PNP epitaxial planar typeFor general amplificationUnit: mm0.40+0.100.050.16+0.100.06 Features3 Large collector current IC Mini type package, allowing downsizing of the equipment and auto-matic insertion through the tape packing and the magazine packing1 2(0.95) (0.95)1.90.12.90+0.200.05 Absolute Maximum Ratin
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