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2SB1699 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB1699
   Código: 3A
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 180 MHz
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: MINIP3-F1

 Búsqueda de reemplazo de transistor bipolar 2SB1699

 

2SB1699 Datasheet (PDF)

 ..1. Size:83K  panasonic
2sb1699.pdf pdf_icon

2SB1699

Transistors 2SB1699 Silicon PNP epitaxial planar type Unit mm For power amplification 4.5 0.1 1.6 0.2 1.5 0.1 Features Low collector-emitter saturation voltage VCE(sat) Mini Power type package, allowing downsizing of the equipment 1 23 and automatic insertion through the tape packing and the maga- 0.4 0.08 0.5 0.08 0.4 0.04 zine packing. 1.5 0.1 3 Absolu

 8.1. Size:77K  renesas
2sb1691.pdf pdf_icon

2SB1699

2SB1691 Silicon PNP Epitaxial Planer Low Frequency Power Amplifier REJ03G0482-0200 (Previous ADE-208-1387A (Z)) Rev.2.00 Dec.09.2004 Features Small size package MPAK (SC 59A) Large Maximum current IC = 1 A Low collector to emitter saturation voltage VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/ 0.05 A) High power dissipation PC = 800 mW (when usi

 8.2. Size:88K  renesas
r07ds0272ej 2sb1691-1.pdf pdf_icon

2SB1699

Preliminary Datasheet 2SB1691 R07DS0272EJ0300 (Previous REJ03G0482-0200) Silicon PNP Epitaxial Planer Rev.3.00 Low Frequency Power Amplifier Mar 28, 2011 Features Small size package MPAK (SC 59A) Large Maximum current IC = 1 A Low collector to emitter saturation voltage VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/ 0.05 A) High power dissipation

 8.3. Size:68K  rohm
2sb1690.pdf pdf_icon

2SB1699

2SB1690 Transistors General purpose amplification(-12V, -2A) 2SB1690 Applications External dimensions (Unit mm) Low frequency amplifier TSMT3 Deiver 1.0MAX 2.9 0.85 0.4 0.7 Features (3) 1) A collector current is large. 2) Collector saturation voltage is low. (1) (2) VCE(sat) max. -180mV 0.95 0.95 0.16 1.9 at IC= -1A / IB= -50mA (1) Base (2) Emitter Ea

Otros transistores... 2SB1643 , 2SB1645 , 2SB1653 , 2SB1667 , 2SB1678 , 2SB1679 , 2SB1688 , 2SB1693 , 2N5551 , 2SB1713 , FJAF6810A_J6810A , 2SC5936 , 2SC5248 , 2SC5615 , 2SC5694 , 2SC6093LS , 2SB1714 .

History: BU361 | CHDTC124TKGP | DNLS160V | AC402

 

 
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