All Transistors. 2SB1699 Datasheet

 

2SB1699 Datasheet and Replacement


   Type Designator: 2SB1699
   SMD Transistor Code: 3A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 180 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: MINIP3-F1
 

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2SB1699 Datasheet (PDF)

 ..1. Size:83K  panasonic
2sb1699.pdf pdf_icon

2SB1699

Transistors2SB1699Silicon PNP epitaxial planar typeUnit: mmFor power amplification4.50.11.60.2 1.50.1 Features Low collector-emitter saturation voltage VCE(sat) Mini Power type package, allowing downsizing of the equipment1 23and automatic insertion through the tape packing and the maga-0.40.08 0.50.08 0.40.04zine packing. 1.50.13 Absolu

 8.1. Size:77K  renesas
2sb1691.pdf pdf_icon

2SB1699

2SB1691 Silicon PNP Epitaxial Planer Low Frequency Power Amplifier REJ03G0482-0200 (Previous ADE-208-1387A (Z)) Rev.2.00 Dec.09.2004 Features Small size package: MPAK (SC59A) Large Maximum current: IC = 1 A Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A) High power dissipation: PC = 800 mW (when usi

 8.2. Size:88K  renesas
r07ds0272ej 2sb1691-1.pdf pdf_icon

2SB1699

Preliminary Datasheet 2SB1691 R07DS0272EJ0300(Previous: REJ03G0482-0200)Silicon PNP Epitaxial Planer Rev.3.00Low Frequency Power Amplifier Mar 28, 2011Features Small size package: MPAK (SC59A) Large Maximum current: IC = 1 A Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A) High power dissipation:

 8.3. Size:68K  rohm
2sb1690.pdf pdf_icon

2SB1699

2SB1690 Transistors General purpose amplification(-12V, -2A) 2SB1690 Applications External dimensions (Unit : mm) Low frequency amplifier TSMT3Deiver 1.0MAX2.90.850.4 0.7 Features (3)1) A collector current is large. 2) Collector saturation voltage is low. (1) (2)VCE(sat) : max. -180mV 0.95 0.950.161.9at IC= -1A / IB= -50mA (1) Base (2) EmitterEa

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: MJE2520 | MJE350G | AUY29-3 | KC847S | KMST3906 | MJF18004 | SU179

Keywords - 2SB1699 transistor datasheet

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