2SD2033A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD2033A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.8 W
Tensión colector-base (Vcb): 160 V
Tensión colector-emisor (Vce): 160 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 80 MHz
Capacitancia de salida (Cc): 20 pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: HRT
Búsqueda de reemplazo de transistor bipolar 2SD2033A
2SD2033A Datasheet (PDF)
2sd2033a.pdf
Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference only. Upon actual use, therefore, please requestthat specifications to be sep
2sd2033.pdf
isc Silicon NPN Power Transistor 2SD2033DESCRIPTIONGood Linearity of hFE Collector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOComplement to Type 2SB1353Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high voltage driver applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
2sd2030 2sd2031.pdf
2SD2030, 2SD2031Silicon NPN EpitaxialApplicationLow frequency high voltage amplifierOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SD2030, 2SD2031Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SD2030 2SD2031 UnitCollector to base voltage VCBO 160 200 VCollector to emitter voltage VCEO 160 200 VEmitter to base voltage VEBO 55VCollector current IC 100 100
2sd203.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD203DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Sustaining Voltage-: V = 100V(Min.)CEO(SUS)Low Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and switching applicatio
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050