2SD2033A - Даташиты. Аналоги. Основные параметры

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isc Silicon NPN Power Transistor 2SD2033 DESCRIPTION Good Linearity of h FE Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Complement to Type 2SB1353 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high voltage driver applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

2SD2030, 2SD2031 Silicon NPN Epitaxial Application Low frequency high voltage amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD2030, 2SD2031 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SD2030 2SD2031 Unit Collector to base voltage VCBO 160 200 V Collector to emitter voltage VCEO 160 200 V Emitter to base voltage VEBO 55V Collector current IC 100 100

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD203 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Sustaining Voltage- V = 100V(Min.) CEO(SUS) Low Collector Saturation Voltage- High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and switching applicatio