2SD2273
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD2273
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 45
W
Tensión colector-base (Vcb): 100
V
Tensión colector-emisor (Vce): 80
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 3
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20
MHz
Ganancia de corriente contínua (hfe): 5000
Paquete / Cubierta: TOP-3L
Búsqueda de reemplazo de transistor bipolar 2SD2273
2SD2273
Datasheet (PDF)
..1. Size:56K panasonic
2sd2273.pdf 
Power Transistors2SD2273Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mm 3.3 0.2Complementary to 2SB150020.0 0.5 5.0 0.33.0FeaturesOptimum for 40W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):
8.2. Size:57K panasonic
2sd2276.pdf
Power Transistors2SD2276Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mm 3.3 0.2Complementary to 2SB150320.0 0.5 5.0 0.33.0FeaturesOptimum for 110W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):
8.3. Size:57K panasonic
2sd2275.pdf
Power Transistors2SD2275Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mm 3.3 0.2Complementary to 2SB150220.0 0.5 5.0 0.33.0FeaturesOptimum for 55W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):
8.4. Size:205K inchange semiconductor
2sd2276.pdf
isc Silicon NPN Darlington Power Transistor 2SD2276DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 7A, V = 5V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 7A, I = 7mA)CE(sat) C BComplement to Type 2SB1503Minimum Lot-to-Lot variations for robust deviceperformance and reliable op
8.5. Size:195K inchange semiconductor
2sd2271.pdf
isc Silicon NPN Darlington Power Transistor 2SD2271DESCRIPTIONHigh DC Current Gain-: h = 500(Min)@ (V = 2V, I = 5A)FE CE CHigh Breakdown Voltage :V (sus)=200VMinCEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor drive applicationsHigh current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY
8.6. Size:204K inchange semiconductor
2sd2275.pdf
isc Silicon NPN Darlington Power Transistor 2SD2275DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 4A, V = 5V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 4A, I = 4mA)CE(sat) C BComplement to Type 2SB1502Minimum Lot-to-Lot variations for robust deviceperformance and reliable op
Otros transistores... 2SA1771
, 2SA178
, 2SA1790
, 2SA1791
, 2SA1792
, 2SA1793
, 2SA1794
, 2SA1795
, BC557
, 2SA1799
, 2SA17H
, 2SA18
, 2SA180
, 2SA1800
, 2SA1800O
, 2SA1800R
, 2SA1800Y
.
