2SD2273 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD2273
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 45 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 5000
Noise Figure, dB: -
Package: TOP-3L
2SD2273 Transistor Equivalent Substitute - Cross-Reference Search
2SD2273 Datasheet (PDF)
2sd2273.pdf
Power Transistors2SD2273Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mm 3.3 0.2Complementary to 2SB150020.0 0.5 5.0 0.33.0FeaturesOptimum for 40W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):
2sd2276.pdf
Power Transistors2SD2276Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mm 3.3 0.2Complementary to 2SB150320.0 0.5 5.0 0.33.0FeaturesOptimum for 110W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):
2sd2275.pdf
Power Transistors2SD2275Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mm 3.3 0.2Complementary to 2SB150220.0 0.5 5.0 0.33.0FeaturesOptimum for 55W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):
2sd2276.pdf
isc Silicon NPN Darlington Power Transistor 2SD2276DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 7A, V = 5V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 7A, I = 7mA)CE(sat) C BComplement to Type 2SB1503Minimum Lot-to-Lot variations for robust deviceperformance and reliable op
2sd2271.pdf
isc Silicon NPN Darlington Power Transistor 2SD2271DESCRIPTIONHigh DC Current Gain-: h = 500(Min)@ (V = 2V, I = 5A)FE CE CHigh Breakdown Voltage :V (sus)=200VMinCEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor drive applicationsHigh current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY
2sd2275.pdf
isc Silicon NPN Darlington Power Transistor 2SD2275DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 4A, V = 5V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 4A, I = 4mA)CE(sat) C BComplement to Type 2SB1502Minimum Lot-to-Lot variations for robust deviceperformance and reliable op
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
