2SD2544 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Power Transistors2SD2544Silicon NPN triple diffusion planar typeFor power amplification with high forward current transfer ratioUnit: mm5.0 0.1Features 10.0 0.2 1.0High foward current transfer ratio hFE90Satisfactory linearity of foward current transfer ratio hFEAllowing supply with the radial taping1.2 0.1 C1.02.25 0.2Absolute Maximum Ratings (TC=25C)0

Power Transistors2SD2549Silicon NPN triple diffusion planar typeFor power amplificationUnit: mmFeaturesHigh forward current transfer ratio hFE which has satisfactory4.6 0.29.9 0.32.9 0.2linearityLow collector to emitter saturation voltage VCE(sat)Full-pack package which can be installed to the heat sink with 3.2 0.1one screw1.4 0.2Absolute Maximum Rat

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD254DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 70V(Min)(BR) CEOCollector Power Dissipation-: P = 20W @T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplications.ABSOLUTE MAXIMU

isc Silicon NPN Power Transistor 2SD2549DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOLow Collector Saturation Voltgae-: V = 0.7V(Max.)@ I = 3ACE(sat) CGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =2