2SD2544 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD2544

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 15 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 70 MHz

Ganancia de corriente contínua (hFE): 500

Encapsulados: MT4

 Búsqueda de reemplazo de 2SD2544

- Selecciónⓘ de transistores por parámetros

 

2SD2544 datasheet

 ..1. Size:51K  panasonic
 2sd2544.pdf pdf_icon

2SD2544

Power Transistors 2SD2544 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Unit mm 5.0 0.1 Features 10.0 0.2 1.0 High foward current transfer ratio hFE 90 Satisfactory linearity of foward current transfer ratio hFE Allowing supply with the radial taping 1.2 0.1 C1.0 2.25 0.2 Absolute Maximum Ratings (TC=25 C) 0

 8.1. Size:42K  panasonic
 2sd2549.pdf pdf_icon

2SD2544

Power Transistors 2SD2549 Silicon NPN triple diffusion planar type For power amplification Unit mm Features High forward current transfer ratio hFE which has satisfactory 4.6 0.2 9.9 0.3 2.9 0.2 linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with 3.2 0.1 one screw 1.4 0.2 Absolute Maximum Rat

 8.2. Size:180K  inchange semiconductor
 2sd254.pdf pdf_icon

2SD2544

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD254 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 70V(Min) (BR) CEO Collector Power Dissipation- P = 20W @T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMU

 8.3. Size:213K  inchange semiconductor
 2sd2549.pdf pdf_icon

2SD2544

isc Silicon NPN Power Transistor 2SD2549 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Low Collector Saturation Voltgae- V = 0.7V(Max.)@ I = 3A CE(sat) C Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =2

MOSTRAR MÁS

Otros transistores... 2SD2486, 2SD2491, 2SD2492, 2SD2504, 2SD2527, 2SD2528, 2SD2530, 2SD2538, TIP41C, 2SD2549, 2SD2550, 2SD2551, 2SD2556, 2SD2559, 2SD2565, 2SD2571, 2SD2573