2SD2544 Specs and Replacement

Type Designator: 2SD2544

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 15 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 70 MHz

Forward Current Transfer Ratio (hFE), MIN: 500

Noise Figure, dB: -

Package: MT4

 2SD2544 Substitution

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2SD2544 datasheet

 ..1. Size:51K  panasonic

2sd2544.pdf pdf_icon

2SD2544

Power Transistors 2SD2544 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Unit mm 5.0 0.1 Features 10.0 0.2 1.0 High foward current transfer ratio hFE 90 Satisfactory linearity of foward current transfer ratio hFE Allowing supply with the radial taping 1.2 0.1 C1.0 2.25 0.2 Absolute Maximum Ratings (TC=25 C) 0... See More ⇒

 8.1. Size:42K  panasonic

2sd2549.pdf pdf_icon

2SD2544

Power Transistors 2SD2549 Silicon NPN triple diffusion planar type For power amplification Unit mm Features High forward current transfer ratio hFE which has satisfactory 4.6 0.2 9.9 0.3 2.9 0.2 linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with 3.2 0.1 one screw 1.4 0.2 Absolute Maximum Rat... See More ⇒

 8.2. Size:180K  inchange semiconductor

2sd254.pdf pdf_icon

2SD2544

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD254 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 70V(Min) (BR) CEO Collector Power Dissipation- P = 20W @T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMU... See More ⇒

 8.3. Size:213K  inchange semiconductor

2sd2549.pdf pdf_icon

2SD2544

isc Silicon NPN Power Transistor 2SD2549 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Low Collector Saturation Voltgae- V = 0.7V(Max.)@ I = 3A CE(sat) C Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =2... See More ⇒

Detailed specifications: 2SD2486, 2SD2491, 2SD2492, 2SD2504, 2SD2527, 2SD2528, 2SD2530, 2SD2538, TIP41C, 2SD2549, 2SD2550, 2SD2551, 2SD2556, 2SD2559, 2SD2565, 2SD2571, 2SD2573

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