2SD2687S Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD2687S

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.4 W

Tensión colector-base (Vcb): 15 V

Tensión colector-emisor (Vce): 12 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 360 MHz

Capacitancia de salida (Cc): 30 pF

Ganancia de corriente contínua (hFE): 350

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2SD2687S datasheet

 ..1. Size:76K  rohm
 2sd2687s.pdf pdf_icon

2SD2687S

2SD2687S Transistors Low frequency amplifier, strobe 2SD2687S Dimensions (Unit mm) Application Low frequency amplifier Storobo Features 1) A collector current is large. 2) VCE(sat) 250mV At lc=1.5A / lB=30mA (1)Emitter(GND) (2)Collector(OUT) (3)Base(IN) Taping specifications Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base

 8.1. Size:175K  toshiba
 2sd2686.pdf pdf_icon

2SD2687S

2SD2686 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power) 2SD2686 Solenoid Drive Applications Unit mm Motor Drive Applications High DC current gain hFE = 2000 (min) (VCE = 2 A, IC = 1 A) Zener diode included between collector and base Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-em

 8.2. Size:30K  sanyo
 2sd2689ls.pdf pdf_icon

2SD2687S

Ordering number ENN7527 2SD2689LS NPN Triple Diffused Planar Silicon Transistor 2SD2689LS Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2079D High reliability(Adoption of HVP process). [2SD2689LS] Adoption of MBIT process. 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 Base

 8.3. Size:39K  sanyo
 2sd2688.pdf pdf_icon

2SD2687S

Ordering number ENN7526 2SD2688LS NPN Triple Diffused Planar Silicon Transistor 2SD2688LS Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2079D High reliability(Adoption of HVP process). [2SD2688LS] Adoption of MBIT process. 10.0 4.5 3.2 2.8 On-chip damper diode. 0.9

MOSTRAR MÁS

Otros transistores... 2SD2648, 2SD2649, 2SD2650, 2SD2651, 2SD2659, 2SD2663, 2SD2678, 2SD2679, A733, 2SD2688LS, 2SD2689LS, CBSL100, NESG2101M05, NESG2101M16, NESG210719, NESG2107M33, NESG250134