2SD2687S Specs and Replacement
Type Designator: 2SD2687S
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 360 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 350
Noise Figure, dB: -
2SD2687S Substitution
2SD2687S datasheet
2sd2687s.pdf
2SD2687S Transistors Low frequency amplifier, strobe 2SD2687S Dimensions (Unit mm) Application Low frequency amplifier Storobo Features 1) A collector current is large. 2) VCE(sat) 250mV At lc=1.5A / lB=30mA (1)Emitter(GND) (2)Collector(OUT) (3)Base(IN) Taping specifications Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base ... See More ⇒
2sd2686.pdf
2SD2686 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power) 2SD2686 Solenoid Drive Applications Unit mm Motor Drive Applications High DC current gain hFE = 2000 (min) (VCE = 2 A, IC = 1 A) Zener diode included between collector and base Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-em... See More ⇒
2sd2689ls.pdf
Ordering number ENN7527 2SD2689LS NPN Triple Diffused Planar Silicon Transistor 2SD2689LS Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2079D High reliability(Adoption of HVP process). [2SD2689LS] Adoption of MBIT process. 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 Base ... See More ⇒
2sd2688.pdf
Ordering number ENN7526 2SD2688LS NPN Triple Diffused Planar Silicon Transistor 2SD2688LS Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2079D High reliability(Adoption of HVP process). [2SD2688LS] Adoption of MBIT process. 10.0 4.5 3.2 2.8 On-chip damper diode. 0.9... See More ⇒
Detailed specifications: 2SD2648 , 2SD2649 , 2SD2650 , 2SD2651 , 2SD2659 , 2SD2663 , 2SD2678 , 2SD2679 , A733 , 2SD2688LS , 2SD2689LS , CBSL100 , NESG2101M05 , NESG2101M16 , NESG210719 , NESG2107M33 , NESG250134 .
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