FJPF5321 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FJPF5321

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 800 V

Tensión colector-emisor (Vce): 500 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 14 MHz

Capacitancia de salida (Cc): 65 pF

Ganancia de corriente contínua (hFE): 15

Encapsulados: TO-220F

 Búsqueda de reemplazo de FJPF5321

- Selecciónⓘ de transistores por parámetros

 

FJPF5321 datasheet

 ..1. Size:70K  fairchild semi
 fjpf5321.pdf pdf_icon

FJPF5321

FJPF5321 High Voltage and High Reliability High speed Switching Wide Safe Operating Area TO-220F 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Cu

 9.1. Size:63K  fairchild semi
 fjpf5027.pdf pdf_icon

FJPF5321

FJPF5027 High Voltage and High Reliability High Speed Switching Wide SOA TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 3 A ICP Collector Cur

 9.2. Size:487K  fairchild semi
 fjpf5200.pdf pdf_icon

FJPF5321

January 2009 FJPF5200 NPN Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability IC = 17A. TO-220F High Power Dissipation 50watts. 1 High Frequency 30MHz. 1.Base 2.Collector 3.Emitter High Voltage VCEO=250V Wide S.O.A for reliable operation. Excellent Ga

 9.3. Size:57K  fairchild semi
 fjpf5021.pdf pdf_icon

FJPF5321

FJPF5021 High Voltage and High Reliability High Speed Switching tF = 0.1 s(Typ.) Wide SOA TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 800 V V CEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 5

MOSTRAR MÁS

Otros transistores... FJNS4210R, FJNS4211R, FJNS4212R, FJNS4213R, FJNS4214R, FJP5321, FJP5355, FJP9100, 2SC945, FJPF9020, FJT44, FJV1845, FJV3101R, FJV3102R, FJV3103R, FJV3104R, FJV3105R