All Transistors. FJPF5321 Datasheet

 

FJPF5321 Datasheet and Replacement


   Type Designator: FJPF5321
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 800 V
   Maximum Collector-Emitter Voltage |Vce|: 500 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 14 MHz
   Collector Capacitance (Cc): 65 pF
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO-220F
      - BJT Cross-Reference Search

   

FJPF5321 Datasheet (PDF)

 ..1. Size:70K  fairchild semi
fjpf5321.pdf pdf_icon

FJPF5321

FJPF5321High Voltage and High Reliability High speed Switching Wide Safe Operating AreaTO-220F11.Base 2.Collector 3.EmitterNPN Triple Diffused Planar Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 800 VVCEO Collector-Emitter Voltage 500 VVEBO Emitter-Base Voltage 7 VIC Collector Cu

 9.1. Size:63K  fairchild semi
fjpf5027.pdf pdf_icon

FJPF5321

FJPF5027High Voltage and High Reliability High Speed Switching Wide SOATO-220F11.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 3 A ICP Collector Cur

 9.2. Size:487K  fairchild semi
fjpf5200.pdf pdf_icon

FJPF5321

January 2009FJPF5200NPN Epitaxial Silicon TransistorApplications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = 17A.TO-220F High Power Dissipation : 50watts. 1 High Frequency : 30MHz.1.Base 2.Collector 3.Emitter High Voltage : VCEO=250V Wide S.O.A for reliable operation. Excellent Ga

 9.3. Size:57K  fairchild semi
fjpf5021.pdf pdf_icon

FJPF5321

FJPF5021High Voltage and High Reliability High Speed Switching : tF = 0.1s(Typ.) Wide SOATO-220F11.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 800 V V CEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 5

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: FCG93AX | TN3691 | KT685V

Keywords - FJPF5321 transistor datasheet

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