FJV3112R Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FJV3112R

Código: R32

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 47 kOhm

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Capacitancia de salida (Cc): 3.7 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT-23

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FJV3112R datasheet

 ..1. Size:46K  fairchild semi
 fjv3112r.pdf pdf_icon

FJV3112R

FJV3112R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=47K ) Complement to FJV4112R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R32 R B NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Paramet

 8.1. Size:45K  fairchild semi
 fjv3111r.pdf pdf_icon

FJV3112R

FJV3111R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=22K ) Complement to FJV4111R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R31 R B NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Paramete

 8.2. Size:55K  fairchild semi
 fjv3115r.pdf pdf_icon

FJV3112R

FJV3115R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=2.2K , R2=10K ) 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R35 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value U

 8.3. Size:52K  fairchild semi
 fjv3110r.pdf pdf_icon

FJV3112R

FJV3110R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=10K ) Complement to FJV4110R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R30 R B NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Paramet

MOSTRAR MÁS

Otros transistores... FJV3104R, FJV3105R, FJV3106R, FJV3107R, FJV3108R, FJV3109R, FJV3110R, FJV3111R, BC549, FJV3113R, FJV3114R, FJV3115R, FJV4101R, FJV4102R, FJV4103R, FJV4104R, FJV4105R