FJV3112R Specs and Replacement
Type Designator: FJV3112R
SMD Transistor Code: R32
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 47 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 3.7 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT-23
FJV3112R Substitution
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FJV3112R datasheet
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FJV3110R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=10K ) Complement to FJV4110R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R30 R B NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Paramet... See More ⇒
Detailed specifications: FJV3104R, FJV3105R, FJV3106R, FJV3107R, FJV3108R, FJV3109R, FJV3110R, FJV3111R, BC549, FJV3113R, FJV3114R, FJV3115R, FJV4101R, FJV4102R, FJV4103R, FJV4104R, FJV4105R
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