FJV3115R Todos los transistores

 

FJV3115R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FJV3115R
   Código: R35
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 2.2 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 0.22

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Capacitancia de salida (Cc): 3.7 pF
   Ganancia de corriente contínua (hfe): 33
   Paquete / Cubierta: SOT-23
 

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FJV3115R Datasheet (PDF)

 ..1. Size:55K  fairchild semi
 fjv3115r.pdf pdf_icon

FJV3115R

FJV3115RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=2.2K, R2=10K)2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R35BR2NPN Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value U

 8.1. Size:45K  fairchild semi
 fjv3111r.pdf pdf_icon

FJV3115R

FJV3111RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=22K) Complement to FJV4111R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR31RBNPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Paramete

 8.2. Size:52K  fairchild semi
 fjv3110r.pdf pdf_icon

FJV3115R

FJV3110RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R=10K) Complement to FJV4110R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR30RBNPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Paramet

 8.3. Size:46K  fairchild semi
 fjv3112r.pdf pdf_icon

FJV3115R

FJV3112RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R=47K) Complement to FJV4112R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR32RBNPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Paramet

MOSTRAR MÁS

Otros transistores... FJV3107R , FJV3108R , FJV3109R , FJV3110R , FJV3111R , FJV3112R , FJV3113R , FJV3114R , BC639 , FJV4101R , FJV4102R , FJV4103R , FJV4104R , FJV4105R , FJV4106R , FJV4107R , FJV4108R .

 

 
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