FJV3115R Specs and Replacement
Type Designator: FJV3115R
SMD Transistor Code: R35
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.22
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 3.7 pF
Forward Current Transfer Ratio (hFE), MIN: 33
Package: SOT-23
FJV3115R Substitution
- BJT ⓘ Cross-Reference Search
FJV3115R datasheet
FJV3115R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=2.2K , R2=10K ) 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R35 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value U... See More ⇒
FJV3111R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=22K ) Complement to FJV4111R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R31 R B NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Paramete... See More ⇒
FJV3110R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=10K ) Complement to FJV4110R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R30 R B NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Paramet... See More ⇒
FJV3112R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=47K ) Complement to FJV4112R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R32 R B NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Paramet... See More ⇒
Detailed specifications: FJV3107R, FJV3108R, FJV3109R, FJV3110R, FJV3111R, FJV3112R, FJV3113R, FJV3114R, BC556, FJV4101R, FJV4102R, FJV4103R, FJV4104R, FJV4105R, FJV4106R, FJV4107R, FJV4108R
Keywords - FJV3115R pdf specs
FJV3115R cross reference
FJV3115R equivalent finder
FJV3115R pdf lookup
FJV3115R substitution
FJV3115R replacement
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P
Popular searches
c2240 transistor | 2sc1918 | c1213 transistor | 2sc1400 replacement | 2sb817 | mn2488 datasheet | c2026 transistor | 2n3903 transistor






