FJV4110R Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FJV4110R

Código: R80

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 10 kOhm

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Capacitancia de salida (Cc): 5.5 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT-23

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FJV4110R datasheet

 ..1. Size:52K  fairchild semi
 fjv4110r.pdf pdf_icon

FJV4110R

FJV4110R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=10K ) Complement to FJV3110R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R R80 B PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Paramete

 8.1. Size:45K  fairchild semi
 fjv4112r.pdf pdf_icon

FJV4110R

FJV4112R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=47K ) Complement to FJV3112R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R R82 B PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Paramete

 8.2. Size:45K  fairchild semi
 fjv4111r.pdf pdf_icon

FJV4110R

FJV4111R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=22K ) Complement to FJV3111R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R R81 B PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Paramete

 8.3. Size:46K  fairchild semi
 fjv4113r.pdf pdf_icon

FJV4110R

FJV4113R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=2.2K , R2=47K ) Complement to FJV3113R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R1 B R83 R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise note

MOSTRAR MÁS

Otros transistores... FJV4102R, FJV4103R, FJV4104R, FJV4105R, FJV4106R, FJV4107R, FJV4108R, FJV4109R, S9018, FJV4111R, FJV4112R, FJV4113R, FJV4114R, FJV42MTF, FJV992, FJX1182, FJX2222A