FJV4110R Specs and Replacement
Type Designator: FJV4110R
SMD Transistor Code: R80
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 5.5 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT-23
FJV4110R Substitution
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FJV4110R datasheet
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FJV4113R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=2.2K , R2=47K ) Complement to FJV3113R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R1 B R83 R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise note... See More ⇒
Detailed specifications: FJV4102R, FJV4103R, FJV4104R, FJV4105R, FJV4106R, FJV4107R, FJV4108R, FJV4109R, S9018, FJV4111R, FJV4112R, FJV4113R, FJV4114R, FJV42MTF, FJV992, FJX1182, FJX2222A
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