FJV42MTF Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FJV42MTF

Código: 1DF

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.35 W

Tensión colector-base (Vcb): 350 V

Tensión colector-emisor (Vce): 350 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 50 MHz

Capacitancia de salida (Cc): 3 pF

Ganancia de corriente contínua (hFE): 40

Encapsulados: SOT-23

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FJV42MTF datasheet

 ..1. Size:97K  fairchild semi
 fjv42mtf.pdf pdf_icon

FJV42MTF

March 2007 FJV42 NPN High Voltage Transistor 3 2 SOT-23 1 Marking 1DF 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 6 V IC Collector Current 500 mA TSTG Storage Temperature Range -55 150 C PC Collector Po

 ..2. Size:273K  onsemi
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FJV42MTF

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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