FJX3013R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FJX3013R
Código: S13
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.047
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Capacitancia de salida (Cc): 3.7 pF
Ganancia de corriente contínua (hfe): 68
Paquete / Cubierta: SOT-323
Búsqueda de reemplazo de transistor bipolar FJX3013R
FJX3013R Datasheet (PDF)
fjx3013r.pdf
FJX3013RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =2.2K, R2=47K) Complement to FJX4013R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S13BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise not
fjx3011r.pdf
FJX3011RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=22K) Complement to FJX4011R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCS11RBNPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Paramet
fjx3010r.pdf
FJX3010RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10K) Complement to FJX4010R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCS10RBNPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Paramet
fjx3015r.pdf
FJX3015RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=2.2K, R2=10K)21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S15BR2NPN Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value
fjx3012r.pdf
FJX3012RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=47K) Complement to FJX4012R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCS12RBNPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Paramet
fjx3014r.pdf
FJX3014RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =4.7K, R2=47K) Complement to FJX4014R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S14BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise not
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SC1261F | 2N1457 | BD193-6 | L2SA812QLT3G | L8550QLT1G
History: 2SC1261F | 2N1457 | BD193-6 | L2SA812QLT3G | L8550QLT1G
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050