FJX3013R Datasheet, Equivalent, Cross Reference Search
Type Designator: FJX3013R
SMD Transistor Code: S13
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.047
Maximum Collector Power Dissipation (Pc): 0.2
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Collector Capacitance (Cc): 3.7
pF
Forward Current Transfer Ratio (hFE), MIN: 68
Noise Figure, dB: -
Package: SOT-323
FJX3013R Transistor Equivalent Substitute - Cross-Reference Search
FJX3013R Datasheet (PDF)
fjx3013r.pdf
FJX3013RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =2.2K, R2=47K) Complement to FJX4013R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S13BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise not
fjx3011r.pdf
FJX3011RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=22K) Complement to FJX4011R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCS11RBNPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Paramet
fjx3010r.pdf
FJX3010RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10K) Complement to FJX4010R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCS10RBNPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Paramet
fjx3015r.pdf
FJX3015RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=2.2K, R2=10K)21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S15BR2NPN Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value
fjx3012r.pdf
FJX3012RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=47K) Complement to FJX4012R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCS12RBNPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Paramet
fjx3014r.pdf
FJX3014RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =4.7K, R2=47K) Complement to FJX4014R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S14BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise not
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: RT1P141M | 2N956 | 2SB227
