FJY3012R Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FJY3012R

Código: S12

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 47 kOhm

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Capacitancia de salida (Cc): 3.7 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT-523F

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FJY3012R datasheet

 ..1. Size:244K  fairchild semi
 fjy3012r.pdf pdf_icon

FJY3012R

July 2007 FJY3012R tm NPN Epitaxial Silicon Transistor Features Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=47K ) Complement to FJY4012R Equivalent Circuit C C S12 E B E B SOT - 523F Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collecto

 8.1. Size:243K  fairchild semi
 fjy3010r.pdf pdf_icon

FJY3012R

July 2007 FJY3010R tm NPN Epitaxial Silicon Transistor Features Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10K ) Complement to FJY4010R Equivalent Circuit C C S10 E B E B SOT - 523F Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collecto

 8.2. Size:254K  fairchild semi
 fjy3014r.pdf pdf_icon

FJY3012R

July 2007 FJY3014R tm NPN Epitaxial Silicon Transistor Features Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K , R2=47K ) Complement to FJY4014R Equivalent Circuit C C S14 E B E B SOT - 523F Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V

 8.3. Size:252K  fairchild semi
 fjy3013r.pdf pdf_icon

FJY3012R

July 2007 FJY3013R tm NPN Epitaxial Silicon Transistor Features Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=2.2K , R2=47K ) Complement to FJY4013R Equivalent Circuit C C S13 E B E B SOT - 523F Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V

MOSTRAR MÁS

Otros transistores... FJY3004R, FJY3005R, FJY3006R, FJY3007R, FJY3008R, FJY3009R, FJY3010R, FJY3011R, A940, FJY3013R, FJY3014R, FJY3015R, FJY4001R, FJY4002R, FJY4003R, FJY4004R, FJY4005R