All Transistors. FJY3012R Datasheet

 

FJY3012R Datasheet and Replacement


   Type Designator: FJY3012R
   SMD Transistor Code: S12
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 47 kOhm
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 3.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-523F
 

 FJY3012R Substitution

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FJY3012R Datasheet (PDF)

 ..1. Size:244K  fairchild semi
 fjy3012r.pdf pdf_icon

FJY3012R

July 2007FJY3012RtmNPN Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=47K) Complement to FJY4012REquivalent CircuitC CS12 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collecto

 8.1. Size:243K  fairchild semi
 fjy3010r.pdf pdf_icon

FJY3012R

July 2007FJY3010RtmNPN Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10K) Complement to FJY4010REquivalent CircuitC CS10 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collecto

 8.2. Size:254K  fairchild semi
 fjy3014r.pdf pdf_icon

FJY3012R

July 2007FJY3014RtmNPN Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=47K) Complement to FJY4014REquivalent CircuitC CS14 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V

 8.3. Size:252K  fairchild semi
 fjy3013r.pdf pdf_icon

FJY3012R

July 2007FJY3013RtmNPN Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=2.2K, R2=47K) Complement to FJY4013REquivalent CircuitC CS13 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V

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Datasheet: FJY3004R , FJY3005R , FJY3006R , FJY3007R , FJY3008R , FJY3009R , FJY3010R , FJY3011R , B772 , FJY3013R , FJY3014R , FJY3015R , FJY4001R , FJY4002R , FJY4003R , FJY4004R , FJY4005R .

History: AD145 | 2SC1670 | D60T3590 | FJY3013R | 40321 | IR900

Keywords - FJY3012R transistor datasheet

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