FSB560A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FSB560A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 75 MHz
Capacitancia de salida (Cc): 30 pF
Ganancia de corriente contínua (hfe): 250
Paquete / Cubierta: SSOT-3 SOT-23
Búsqueda de reemplazo de FSB560A
FSB560A Datasheet (PDF)
fsb560 fsb560a.pdf

FSB560 / FSB560ANPN Low-Saturation TransistorFeaturesC These devices are designed with high-current gain and low-saturation voltage with collector currents up to 2 A continuous. EBSuperSOTTM-3 (SOT-23)Ordering InformationPart Number Marking Package Packing MethodFSB560 560 SSOT 3L Tape and ReelFSB560A 560A SSOT 3L Tape and ReelAbsolute Maximum Ratings(1),(2)Stress
fsb560.pdf

FSB560 / FSB560ACEB SuperSOTTM-3 (SOT-23) NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter FSB560/FSB560A Units60 VVCEO Collector-Emitter Voltage80 VVCBO Collector-Base Voltage5 VVEBO E
fsb560-a.pdf

May 2009FSB560/FSB560ANPN Low Saturation TransistorCFeatures These devices are designed with high current gain and low saturation voltage with Ecollector currents up to 2A continuous.BAbsolute Maximum Ratings* TA=25C unless otherwise noted Symbol Parameter Ratings UnitsVCEO Collector-Emitter Voltage 60 VVCBO Collector-Base Voltage 80 VVEBO Emitter-Base Voltage 5 V
Otros transistores... FPN560 , FPN560A , FPN630 , FPN630A , FPN660 , FPN660A , FPNH10 , FSB560 , 2SC1740 , FSB619 , FSB649 , FSB660 , FSB660A , FSB6726 , FSB749 , FSBCW30 , FTM3725 .
History: BUJ303B
History: BUJ303B



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