FSB560A Datasheet, Equivalent, Cross Reference Search
Type Designator: FSB560A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 75 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 250
Noise Figure, dB: -
Package: SSOT-3 SOT-23
FSB560A Transistor Equivalent Substitute - Cross-Reference Search
FSB560A Datasheet (PDF)
fsb560 fsb560a.pdf
FSB560 / FSB560ANPN Low-Saturation TransistorFeaturesC These devices are designed with high-current gain and low-saturation voltage with collector currents up to 2 A continuous. EBSuperSOTTM-3 (SOT-23)Ordering InformationPart Number Marking Package Packing MethodFSB560 560 SSOT 3L Tape and ReelFSB560A 560A SSOT 3L Tape and ReelAbsolute Maximum Ratings(1),(2)Stress
fsb560.pdf
FSB560 / FSB560ACEB SuperSOTTM-3 (SOT-23) NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter FSB560/FSB560A Units60 VVCEO Collector-Emitter Voltage80 VVCBO Collector-Base Voltage5 VVEBO E
fsb560-a.pdf
May 2009FSB560/FSB560ANPN Low Saturation TransistorCFeatures These devices are designed with high current gain and low saturation voltage with Ecollector currents up to 2A continuous.BAbsolute Maximum Ratings* TA=25C unless otherwise noted Symbol Parameter Ratings UnitsVCEO Collector-Emitter Voltage 60 VVCBO Collector-Base Voltage 80 VVEBO Emitter-Base Voltage 5 V
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
