FSB660 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FSB660

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 75 MHz

Capacitancia de salida (Cc): 30 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SSOT-3 SOT-23

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FSB660 datasheet

 ..1. Size:53K  fairchild semi
 fsb660 a.pdf pdf_icon

FSB660

FSB660 / FSB660A C E B SuperSOTTM-3 (SOT-23) PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* T A = 25 C unless otherwise noted Symbol Parameter FSB660/FSB660A Units 60 V VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 5 V VEBO

 0.1. Size:351K  onsemi
 fsb660a.pdf pdf_icon

FSB660

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Otros transistores... FPN630A, FPN660, FPN660A, FPNH10, FSB560, FSB560A, FSB619, FSB649, BD136, FSB660A, FSB6726, FSB749, FSBCW30, FTM3725, FZT3019, KSA1015, KSA1203